Dose radiation effects in FinFETs

Wu, XS
Chan, PCH
Orozco, A
Vazquez, A
Chaudhry, A
Colinge, JP

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Publication date

January 2006

DOI

10.1016/j.sse.2005.12.017

ISSN

0038-1101

Journal

issn:0038-1101

Citation count (estimate)

Abstract

This paper reports the effects of dose irradiation on FinFETs. A threshold voltage shift of 100 mV is observed after irradiation at a dose of 300 krad(SiO2). The creation of oxide charges reduces the threshold voltage at the bottom of the device, while the generation of interface traps increases the threshold voltage at the sidewalls of the fin. The leakage current and the subthreshold slope do not degrade appreciably after irradiation to 300 krad(SiO2). (c) 2006 Elsevier Ltd. All rights reserved

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Dose radiation effects in FinFETs

Abstract

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Dose radiation effects in FinFETs

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