Poly-Si pixel electrode and SOP-AMOLED panel made with simplified process flow

Boron-doped solution-based metal induced crystallized poly-Si was used as anode of organic light emitting diode. Systemization of the semi-transparent and semi-reflective anode with the high reflectivity Al cathode could form a micro-cavity structure to improve the efficiency of OLED made on it. The maximum luminance efficiency of the red, green and blue OLEDs with the poly-Si anode is 3.67 cd/A, 5.88 cd/A and 1.88 cd/A, respectively, comparable to or even better than that of the OLEDs with the ITO anodes. Using the poly-Si anode technique to prepare the pixel micro-electrodes in AMOLED, the micro-anodes of the OLEDs were made by the same poly-Si thin film and with the same process flow as those to made the drain/source of the drive poly-Si TFT. Therefore, the replacement of conventional ITO by MIC poly-Si leads to the process flow simplification, including the elimination of the ITO deposition, the pixel electrode formation, and the contact holes formation between the pixel electrode and the drain of the driving TFT. Based on the MIC poly-Si pixel electrode technique and the full PMOS poly-Si peripheral driving circuit technology, a 4-MASK process flow was proposed and it is carrying on the system-on-panel active matrix substrate for OLED (SOP-AMOLED). The simplification of the process flow would result in the significant reduction of manufacturing costs