Add to ORKGThis paper summarizes BSIM5 MOSFET model for aggressively scaled CMOS technology which was released recently. Various new physical effects are timely addressed in the new physical core including more accurate physics that is easily extended to non-charge-sheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs. The flexible architecture also enables the carry-over of BSIM4's accurate modeling of numerous device behaviors attributable to device physics or technologies. ©2004 IEEE
This paper presents the benchmark test results on the symmetry and continuity characteristics betwee...
This book gives a comprehensive overview of all important issues concerning modern Si MOSFETs. It co...
We present an accurate and unified MOSFET model with benchmark test results for analog/digital circu...
The continued development of CMOS technology and the emergence of new applications demand continued ...
This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New feat...
This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New fea...
This paper outlines the charge-based core and the model architecture of the BSIM5, an advanced charg...
Using embedded SRAM as a path, FinFET may enter manufacturing at 32nm. FinFET provides several advan...
BSIM6: Charge based MOSFET model BSIM6 is the next BSIM Bulk MOSFET model Charge based core der...
As bulk CMOS scaling is approaching the limit that is imposed by gate oxide tunneling, body doping, ...
This paper presents the current status of the forth generation BSIM model and issues of modeling CMO...
This paper presents a comprehensive outlook for the current technology status and the prospective up...
Multiple-gate MOSFETs with superior short channel control are expected to replace planar CMOS in the...
Practicing designers, students, and educators in the semiconductor field face an ever expanding port...
The technology of CMOS large-scale integrated circuits (LSI's) achieved remarkable advances over las...
This paper presents the benchmark test results on the symmetry and continuity characteristics betwee...
This book gives a comprehensive overview of all important issues concerning modern Si MOSFETs. It co...
We present an accurate and unified MOSFET model with benchmark test results for analog/digital circu...
The continued development of CMOS technology and the emergence of new applications demand continued ...
This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New feat...
This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New fea...
This paper outlines the charge-based core and the model architecture of the BSIM5, an advanced charg...
Using embedded SRAM as a path, FinFET may enter manufacturing at 32nm. FinFET provides several advan...
BSIM6: Charge based MOSFET model BSIM6 is the next BSIM Bulk MOSFET model Charge based core der...
As bulk CMOS scaling is approaching the limit that is imposed by gate oxide tunneling, body doping, ...
This paper presents the current status of the forth generation BSIM model and issues of modeling CMO...
This paper presents a comprehensive outlook for the current technology status and the prospective up...
Multiple-gate MOSFETs with superior short channel control are expected to replace planar CMOS in the...
Practicing designers, students, and educators in the semiconductor field face an ever expanding port...
The technology of CMOS large-scale integrated circuits (LSI's) achieved remarkable advances over las...
This paper presents the benchmark test results on the symmetry and continuity characteristics betwee...
This book gives a comprehensive overview of all important issues concerning modern Si MOSFETs. It co...
We present an accurate and unified MOSFET model with benchmark test results for analog/digital circu...