Top-gate thin-film transistors based on GaN channel layer

Gallium nitride (GaN) thin films were utilized as active channel layer to produce top-gate n-type thin-film transistors (TFTs). GaN thin films with wurtzite structure were deposited by reactive DC magnetron sputtering technique at room temperature using liquid gallium target. The GaN TFTs exhibit good electrical performance such as field effect mobility of 1 cm 2/Vs, threshold voltage of -0.4 V, on/off current ratio of 10 5, and subthreshold swing of 0.8 V/decade. © 2012 American Institute of Physics