Fabrication of field-effect transistor device with higher fullerene, C₈₈

A fullerene field-effect transistor (FET) device has been fabricated with thin films of C88, and n-channel normally-on depletion-type FET properties have been found in this FET device. The C88 FET exhibited a high mobility, μ, of 2.5 x 10-3 cm2 V-1 s-1 at 300 K, in fullerene FETs. The carrier transport showed a thermally-activated hopping transport. The n-channel normally-on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C88 thin-films.