Two different types of hydrogen response signals (DC and AC) of a proton-pumping gate FET with triple layer gate structure (Pd/proton conducting polymer/Pt) were obtained. The proton-pumping gate FET showed good selectivity against other gases (CH4, C2H6, NH3, and O2). For practical use, the hydrogen response characteristics of the proton-pumping gate FET were investigated in air (a gaseous mixture of oxygen and nitrogen). The proton-pumping gate FET showed different hydrogen response characteristics in nitrogen as well as in air, despite the lack of oxygen interference independently. To clarify the response mechanism of the proton-pumping gate FET, a hydrogen response measurement was performed, using a gas flow system and electrochemical i...
International audienceThe potentiometric response of three different platinum gas diffusion electrod...
Abstract—An LaF3 layer was shown to improve the character-istics of field-effect gas sensors for roo...
Sil icon diodes employing Pd as a contact (gate) on top of a thin intervening SiO2 layer on Si make ...
Two different types of hydrogen response signals (DC and AC) of a proton-pumping gate FET with tripl...
Generation of hydrogen represents a severe industrial hazard primarily because the mixture of hydrog...
A novel approach has been presented using a sensor model to study the sensing response of magnetic t...
The effect of Cr addition to the gate of a Pd/AlN/Si Hydrogen gas sensor was investigated by modifyi...
[[abstract]]The hydrogen sensing properties of a Pd/InAlAs metamorphic high electron mobility transi...
The pure Pd and Pd alloy gated metal-insulator-semiconductor (MIS) hydrogen sensors have been studie...
Pt/AlGaN/AIN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hyd...
[[abstract]]The hydrogen sensing properties of a Pd/InAlAs metamorphic high electron mobility transi...
Pt/AlGaN/AIN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schot...
Abstract : We propose a novel technique to investigate the gas sensitivity of materials for implemen...
Thin palladium layer was used as a gate material in a MOSFET device to obtain a hydrogen gas sensor....
MISiC Schottky-diode hydrogen sensors with gate insulator grown in three different nitridation gases...
International audienceThe potentiometric response of three different platinum gas diffusion electrod...
Abstract—An LaF3 layer was shown to improve the character-istics of field-effect gas sensors for roo...
Sil icon diodes employing Pd as a contact (gate) on top of a thin intervening SiO2 layer on Si make ...
Two different types of hydrogen response signals (DC and AC) of a proton-pumping gate FET with tripl...
Generation of hydrogen represents a severe industrial hazard primarily because the mixture of hydrog...
A novel approach has been presented using a sensor model to study the sensing response of magnetic t...
The effect of Cr addition to the gate of a Pd/AlN/Si Hydrogen gas sensor was investigated by modifyi...
[[abstract]]The hydrogen sensing properties of a Pd/InAlAs metamorphic high electron mobility transi...
The pure Pd and Pd alloy gated metal-insulator-semiconductor (MIS) hydrogen sensors have been studie...
Pt/AlGaN/AIN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hyd...
[[abstract]]The hydrogen sensing properties of a Pd/InAlAs metamorphic high electron mobility transi...
Pt/AlGaN/AIN/GaN Schottky diodes are fabricated and characterized for hydrogen sensing. The Pt Schot...
Abstract : We propose a novel technique to investigate the gas sensitivity of materials for implemen...
Thin palladium layer was used as a gate material in a MOSFET device to obtain a hydrogen gas sensor....
MISiC Schottky-diode hydrogen sensors with gate insulator grown in three different nitridation gases...
International audienceThe potentiometric response of three different platinum gas diffusion electrod...
Abstract—An LaF3 layer was shown to improve the character-istics of field-effect gas sensors for roo...
Sil icon diodes employing Pd as a contact (gate) on top of a thin intervening SiO2 layer on Si make ...