GaN-based SSD structure for THz applications
- Agrawal, Manvi
- Nethaji, Dharmarasu
- Radhakrishnan, K.
- Gaquiere, Christophe
- Ducournau, Guillaume
- Lesecq, Marie
- Mateos López, Javier
- González Sánchez, Tomás
- Íñiguez de la Torre Mulas, Ignacio
- García Sánchez, Sergio
- Pérez Santos, María Susana
Publication date
January 2019
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) Language
EnglishAbstract
[EN]Switching diode (SSD) structure on SiC, designed using Monte Carlo simulations, for the fabrication of nano-scale SSDs to reach THz emission as a result of Gunn oscillations. Crack-free epistructure with good epi-characteristics and uniformity on 2- inch SiC substrate was achieved. High carrier density of 2 ×1018 cm-3 resulted in a low contact resistance of 0.35 Ω.mm.NRF2017-NRF-ANR003 GaNGUN project. Ministerio de Economía y Competitividad (Spain) and FEDER (European Union) through project TEC2017-83910-R and Consejería de Educación de la Junta de Castilla y León (Spain) and FEDER (European Union) through project SA254P18
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