Optical and Structural Properties of Si Nanocrystals in SiO2 Films
- Nikitin, Timur
- Khriachtchev, Leonid
DOIAbstract
Optical and structural properties of Si nanocrystals (Si-nc) in silica films are described. For the SiOx (x <2) films annealed above 1000 degrees C, the Raman signal of Si-nc and the absorption coefficient are proportional to the amount of elemental Si detected by X-ray photoelectron spectroscopy. A good agreement is found between the measured refractive index and the value estimated by using the effective-medium approximation. The extinction coefficient of elemental Si is found to be between the values of crystalline and amorphous Si. Thermal annealing increases the degree of Si crystallization; however, the crystallization and the Si-SiO2 phase separation are not complete after annealing at 1200 degrees C. The 1.5-eV PL quantum yield incr...
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