Results on double-sided d.c.-coupled silicon strip detectors irradiated with photons up to 1 Mrad

We irradiated with photons from a 60Co source a double-sided d.c.-coupled silicon strip detector and several test structures fabricated at CSEM. We measured the leakage currents and the interstrip and backside capacitances. Up to a maximum dose of 1 Mrad, the current densities are always below 350 nA/cm2, mostly due to thermally generated surface currents. The interstrip capacitances increase at most 17% with respect to not irradiated detectors, while the backside capacitances do not change. PACS 29.40.Wk - Solid-state detectors. PACS 61.80.Ed - y-rays. PACS 61.82.Fk - Radiation effect on semicondutors. PACS 01.30.Cc - Conference proceeding