Multi-MGy Radiation Hardened CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests
- Goiffon, Vincent
- Corbière, Franck
- Rolando, Sébastien
- Estribeau, Magali
- Avon, Barbara
- Magnan, Pierre
- Baer, Jérémy
- Molina, Romain
- Chabane, Aziouz
- Cervantes, Paola
- Gaillardin, Marc
- Paillet, Philippe
- Marcandella, Claude
- Girard, Sylvain
Publication date
December 2015
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
The radiation hardness of a radiation-hardened-by-design CMOS Image Sensor is validated up to several MGy(SiO2) (>100 Mrad) of TID. The perspectives in terms of further improvements and applications are discussed
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