Radiation Damages in CMOS Active Pixel Sensors

This paper presents a summary of the main results we observed on irradiated custom imagers manufactured using 0.18 um CMOS processes dedicated to imaging. Several types of energetic particles have been used (gamma rays, X-rays, protons and neutrons) to irradiate the studied devices. Both total ionizing dose (TID) and displacement damage effects are reported. The most sensitive parameter is still the dark current