Chemically gated electronic structure of a superconducting doped topological insulator system

Journal of Physics: Conference Series. Volume 449, Issue 1, 2013, Article number 012037. 10th International Conference on Materials and Mechanisms of Superconductivity, M2S 2012; Washington, DC; United States; 29 July 2012 through 3 August 2012; Code 98822.Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator CuxBi2Se3 as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices. © Published under licence by IOP Publishing Ltd