Add to ORKGThis study aimed to determine the effect of atomic fraction x of tellurium (Te) on the lattice parameters and the crystal structure of the Pb (Se, Te) compound prepared using Bridgman technique. Further characterization of the materials used X-Ray Difraction to determine the lattice parameters and the crystal structure. The chemical composition was determined using Energy Dispersive Spectroscopy (EDS), and the surface morfology shown by Scanning Electron Microscope (SEM). The results showed that all compounds crystallized in a cubic crystal structure and the lattice parameters of the crystal were a function of the fraction x of Tellurium atoms. EDS results showed that all samples were non stoichiometric but approached ideal compositi...
A framework is established for the analysis of defect chemistry of the entire (Pb$\sb{1-x}$Sn$\sb{x}...
The influence of tellurium in the indium segregation of Ga1-xInxSb:Te ingots obtained by the convent...
This report deals with the production of Tellurium crystals, and the effect of temperature on their ...
This study aimed to determine the effect of atomic fraction x of tellurium (Te) on the lattice param...
This study aimed to determine the effect of atomic fraction x of tellurium (Te) on the lattice param...
Synthesis and growth of PbTe and (Pb, Sn)Te single crystals by the Bridgman method and by the Travel...
In the system Ge-Sn-Sb-Te, there is a complete solid solution series between GeSb2Te4 and SnSb2Te4. ...
The Sn(S1-xTex) solid solutions have been prepared on both massive materials and thin films with var...
Metastable single crystals of nonstoichiometric Pb1-xTe are obtained by rapid cooling from the melt....
The paper presents the results of research of X-ray diffraction and thermoelectric parameters (therm...
Cd1−xZnxTe (0 ≤ x ≤ 0.1) ingots were obtained by Bridgman’s method using two different speeds in ord...
Abstract Lead-tin telluride alloy, Pb 1-x Sn x Te, is a narrow band gap group IV-VI semiconductor wi...
These study aims determine the characterization of structure and chemical composition of crystal Sn(...
A framework is established for the analysis of defect chemistry of the entire (Pb$\sb{1-x}$Sn$\sb{x}...
The influence of tellurium in the indium segregation of Ga1-xInxSb:Te ingots obtained by the convent...
This report deals with the production of Tellurium crystals, and the effect of temperature on their ...
This study aimed to determine the effect of atomic fraction x of tellurium (Te) on the lattice param...
This study aimed to determine the effect of atomic fraction x of tellurium (Te) on the lattice param...
Synthesis and growth of PbTe and (Pb, Sn)Te single crystals by the Bridgman method and by the Travel...
In the system Ge-Sn-Sb-Te, there is a complete solid solution series between GeSb2Te4 and SnSb2Te4. ...
The Sn(S1-xTex) solid solutions have been prepared on both massive materials and thin films with var...
Metastable single crystals of nonstoichiometric Pb1-xTe are obtained by rapid cooling from the melt....
The paper presents the results of research of X-ray diffraction and thermoelectric parameters (therm...
Cd1−xZnxTe (0 ≤ x ≤ 0.1) ingots were obtained by Bridgman’s method using two different speeds in ord...
Abstract Lead-tin telluride alloy, Pb 1-x Sn x Te, is a narrow band gap group IV-VI semiconductor wi...
These study aims determine the characterization of structure and chemical composition of crystal Sn(...
A framework is established for the analysis of defect chemistry of the entire (Pb$\sb{1-x}$Sn$\sb{x}...
The influence of tellurium in the indium segregation of Ga1-xInxSb:Te ingots obtained by the convent...
This report deals with the production of Tellurium crystals, and the effect of temperature on their ...