Silicon carbide on insulator is a promising platform for electronic devices at high temperature as well as for opto-electrical applications. Utilizing the chemical inertness of SiC, this work presents a novel technique to form cubic-silicon carbide (3C-SiC) on silicon dioxide (SiO2) by using silicon wet-thermal-oxidation. Experimental data confirmed that SiO2 was successfully formed underneath of 300 nm width SiC nanowires, while the properties of SiC was almost unaffected during the oxidation process. This simple technique will open the pathway to the development of SiCOI (SiC on insulator) based electrical and optical applications
AbstractSilicon carbide nanowires (SiCNWs) are a set of promising reinforcement materials due to the...
In this article, we investigate the thermal growth of SiO2 films on 6H-SiC preamorphized by Ar+ ion ...
Silicon carbide materials are excellent candidates for high-performance applications due to their ou...
An in-depth understanding of the formation of silicon dioxide (SiO2) on silicon carbide (SiC) in the...
Silicon carbide nanowires are valuable for electronic and optical applications, due to their high me...
Composite core-shell SiC-SiOx nanowires can be produced by heating quartz and SiC powders, with addi...
Silicon carbide (SiC) based electronics and sensors hold promise for pushing past the limits of curr...
Nanowires (NWs) open promising near-future perspectives for the design and fabrication of nano-scale...
International audienceChemical transformations on the surface of commercially available 3C-SiC nanop...
Nanowires of SiC were synthesized by carbothermally reducing PVP/TEOS composite fibres obtained by e...
Silicon carbide nanowires (SiCNWs) are a set of promising reinforcement materials due to their super...
167 p.Silicon carbide (SiC) is a wide bandgap semiconductor that exhibits many excellent electrical ...
International audienceThe objective of this study is to grow Si-SiC core-shell nanowires (NWs) for b...
International audienceSiC is unique amongst the wide bandgap semiconductors in that the natural ther...
Chemical transformations on the surface of commercially available 3C-SiC nanoparticles were studied ...
AbstractSilicon carbide nanowires (SiCNWs) are a set of promising reinforcement materials due to the...
In this article, we investigate the thermal growth of SiO2 films on 6H-SiC preamorphized by Ar+ ion ...
Silicon carbide materials are excellent candidates for high-performance applications due to their ou...
An in-depth understanding of the formation of silicon dioxide (SiO2) on silicon carbide (SiC) in the...
Silicon carbide nanowires are valuable for electronic and optical applications, due to their high me...
Composite core-shell SiC-SiOx nanowires can be produced by heating quartz and SiC powders, with addi...
Silicon carbide (SiC) based electronics and sensors hold promise for pushing past the limits of curr...
Nanowires (NWs) open promising near-future perspectives for the design and fabrication of nano-scale...
International audienceChemical transformations on the surface of commercially available 3C-SiC nanop...
Nanowires of SiC were synthesized by carbothermally reducing PVP/TEOS composite fibres obtained by e...
Silicon carbide nanowires (SiCNWs) are a set of promising reinforcement materials due to their super...
167 p.Silicon carbide (SiC) is a wide bandgap semiconductor that exhibits many excellent electrical ...
International audienceThe objective of this study is to grow Si-SiC core-shell nanowires (NWs) for b...
International audienceSiC is unique amongst the wide bandgap semiconductors in that the natural ther...
Chemical transformations on the surface of commercially available 3C-SiC nanoparticles were studied ...
AbstractSilicon carbide nanowires (SiCNWs) are a set of promising reinforcement materials due to the...
In this article, we investigate the thermal growth of SiO2 films on 6H-SiC preamorphized by Ar+ ion ...
Silicon carbide materials are excellent candidates for high-performance applications due to their ou...