The spectroscopic techniques of cathodoluminescence (CL) and photoluminescence (PL) are used to study the origin of red emission in β-Ga 2O 3 grown using the edge-defined film-fed grown (EFG) method and hydride vapor phase epitaxy. Room-temperature CL shows red emission peaks from samples doped with Fe, Sn, and Si and from unintentionally doped (UID) samples. Narrow emission lines around 690 nm are seen strongly in the Fe and UID samples. Temperature-dependent PL analysis of the two prominent red emission lines reveals properties similar to the R lines in sapphire for all samples but with different levels of emission intensities. These lines are attributed to Cr 3+ ionic transitions rather than Fe 3+, as reported previously. The most likely...
Gallium oxide (Ga2O3) is a wide-band-gap semiconductor which has attracted much attention over the p...
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devic...
Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural a...
The semi-insulating single crystal β-Ga2O3 is becoming increasingly useful as a substrate for device...
© 2018 American Physical Society. Cathodoluminescence (CL) spectra were measured to determine the ch...
Producción CientíficaCathodoluminescence (CL) investigations are performed on nominally undoped and ...
In this paper, we present the results of experiments on samples of β-Ga2O3 single crystals under a p...
In this study, experimental and theoretical investigations have been performed on nominally undoped ...
Heterogeneous integration of β-(Sn xGa1− x)2O3 (TGO) UV-C photodetectors on silicon substrates by mo...
In this work three different growth methods have been used to grow β-Ga2O3 nanostructures. The nanos...
In this work, a systematic photoluminescence (PL) study on three series of gallium oxide/aluminum ga...
This study evaluates the effect of crystallinity and point defects on time-dependent photoresponsivi...
In the quest of developing high performance electronic and optical devices and more cost effective f...
We report a cathodoluminescence (CL) study of ß-Ga_2O_3 nanowires grown by thermal evaporation of Ga...
This thesis brings together fundamental studies presented in five papers with the focus on the inves...
Gallium oxide (Ga2O3) is a wide-band-gap semiconductor which has attracted much attention over the p...
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devic...
Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural a...
The semi-insulating single crystal β-Ga2O3 is becoming increasingly useful as a substrate for device...
© 2018 American Physical Society. Cathodoluminescence (CL) spectra were measured to determine the ch...
Producción CientíficaCathodoluminescence (CL) investigations are performed on nominally undoped and ...
In this paper, we present the results of experiments on samples of β-Ga2O3 single crystals under a p...
In this study, experimental and theoretical investigations have been performed on nominally undoped ...
Heterogeneous integration of β-(Sn xGa1− x)2O3 (TGO) UV-C photodetectors on silicon substrates by mo...
In this work three different growth methods have been used to grow β-Ga2O3 nanostructures. The nanos...
In this work, a systematic photoluminescence (PL) study on three series of gallium oxide/aluminum ga...
This study evaluates the effect of crystallinity and point defects on time-dependent photoresponsivi...
In the quest of developing high performance electronic and optical devices and more cost effective f...
We report a cathodoluminescence (CL) study of ß-Ga_2O_3 nanowires grown by thermal evaporation of Ga...
This thesis brings together fundamental studies presented in five papers with the focus on the inves...
Gallium oxide (Ga2O3) is a wide-band-gap semiconductor which has attracted much attention over the p...
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devic...
Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural a...