Reconstructions of the GaAs (1 1 3) surface

We investigated GaAs (1 1 3) surfaces prepared by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) with reflectance anisotropy spectroscopy (RAS) and low energy electron diffraction (LEED) and found two different static (non-growth) reconstructions: For many conditions the well known (8×1) reconstruction is observed, while under more arsenic rich conditions a reconstruction a p(1×1) symmetry shows up. The activation energy for the transition from the p(1×1) to the (8×1) reconstruction was determined to (1.50±0.02) eV. A structure model for the arsenic rich p(1×1) reconstruction is presented in accordance with the above findings