The work presented in this thesis is primarily concerned with the optimisation of extreme ultraviolet (EUV) photoemission around 13.5 nm, from laser produced tin (Sn) plasmas. EUV lithography has been identified as the leading next generation technology to take over from the current optical lithography systems, due to its potential of printing smaller feature sizes on integrated circuits. Many of the problems hindering the implementation of EUV lithography for high volume manufacturing have been overcome during the past 20 years of development. However, the lack of source power is a major concern for realising EUV lithography and remains a major roadblock that must be overcome. Therefore in order to optimise and improve the EUV emission fro...
An experimental study of laser-produced plasmas is performed by irradiating a planar tin target by l...
Extreme ultraviolet lithography (EUVL) is under discussion to be implemented in the production of ch...
Tin and lithium plasmas emit efficiently in the in-band region (13.5 nm with 2% bandwidth) necessary...
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...
The majority of the studies on laser-produced plasmas as an efficient extreme ultraviolet (EUV) ligh...
Out-of-band long wavelength emission measurements from high power, high-repetition-rate extreme-ultr...
We have previously reported encouraging results with a new type of laser plasma source. As a radiati...
The wide range of applications of extreme ultraviolet (EUV) and softX-ray sources including for next...
The emission properties of tin plasmas, produced by the irradiation of preformed liquid tin targets ...
Laser-produced Sn plasmas have been extensively studied as an efficient soft x-ray light source for ...
Laser-produced plasmas (LPPs) are being considered as a light source for the next generation of extr...
The emission properties of tin plasmas, produced by the irradiation of preformed liquid tin targets ...
In this thesis, the fundamental limits of converting laser radiation via tin plasmas into EUV light ...
Since 2002, we have been researching and developing a method for generation EUV light by irradiating...
Laser-produced plasma (LPP) induced during irradiation of a liquid tin droplet with diameter of 150 ...
An experimental study of laser-produced plasmas is performed by irradiating a planar tin target by l...
Extreme ultraviolet lithography (EUVL) is under discussion to be implemented in the production of ch...
Tin and lithium plasmas emit efficiently in the in-band region (13.5 nm with 2% bandwidth) necessary...
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...
The majority of the studies on laser-produced plasmas as an efficient extreme ultraviolet (EUV) ligh...
Out-of-band long wavelength emission measurements from high power, high-repetition-rate extreme-ultr...
We have previously reported encouraging results with a new type of laser plasma source. As a radiati...
The wide range of applications of extreme ultraviolet (EUV) and softX-ray sources including for next...
The emission properties of tin plasmas, produced by the irradiation of preformed liquid tin targets ...
Laser-produced Sn plasmas have been extensively studied as an efficient soft x-ray light source for ...
Laser-produced plasmas (LPPs) are being considered as a light source for the next generation of extr...
The emission properties of tin plasmas, produced by the irradiation of preformed liquid tin targets ...
In this thesis, the fundamental limits of converting laser radiation via tin plasmas into EUV light ...
Since 2002, we have been researching and developing a method for generation EUV light by irradiating...
Laser-produced plasma (LPP) induced during irradiation of a liquid tin droplet with diameter of 150 ...
An experimental study of laser-produced plasmas is performed by irradiating a planar tin target by l...
Extreme ultraviolet lithography (EUVL) is under discussion to be implemented in the production of ch...
Tin and lithium plasmas emit efficiently in the in-band region (13.5 nm with 2% bandwidth) necessary...