Add to ORKGA new design of the avalanche photodiodes with an array of micro-pixel p-n-junctions was developed on base of metal-oxide-silicon structure. The thermal oxide layer of 1000A thickness contains tunnel oxide regions with about 25A thickness. The device exhibits a noise factor ~ 4 at a high multiplication factor (M~10000). A high space uniformity of sensitivity was found for gain of M~ 1000
Avalanche multiplication and excess noise were measured on a series of Al0.6Ga0.4As p+in+ and n+ip+ ...
Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain...
We report the design, fabrication, and test of an InGaAs avalanche photodiode (APD) for 950-1650 nm ...
The shape of potential distribution in micro-pixel avalanche photodiodes (MAPD) with deeply buried p...
This paper presents the electron and hole avalanche multiplication and excess noise characteristics ...
The avalanche noise characteristics of Al0.8Ga0.2 As have been measured in a range of p-i-n and n-i-...
Avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM...
Mean-gain and excess-noise measurements are presented for a 350 × 350 μm 2 P+/N-well/P-sub and a 270...
The paper is concerned with the parameter study of a new generation of micro-pixel avalanche photodi...
An extremely low noise Separate Absorption and Multiplication Avalanche Photodiode (SAM-APD), consis...
The responsivity, noise equivalent power, specific detectivity, shot noise and multiplication noise ...
Accurate detection of weak optical signals is a key function for a wide range of applications. A key...
A larger format photodiode array is always desirable for many LADAR imaging applications. However, a...
We provide a set of design considerations for In0.52Al0.48As based avalanche photodiodes (APDs) in a...
A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known a...
Avalanche multiplication and excess noise were measured on a series of Al0.6Ga0.4As p+in+ and n+ip+ ...
Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain...
We report the design, fabrication, and test of an InGaAs avalanche photodiode (APD) for 950-1650 nm ...
The shape of potential distribution in micro-pixel avalanche photodiodes (MAPD) with deeply buried p...
This paper presents the electron and hole avalanche multiplication and excess noise characteristics ...
The avalanche noise characteristics of Al0.8Ga0.2 As have been measured in a range of p-i-n and n-i-...
Avalanche photodiodes based on GaAs/AlGaAs with separated absorption and multiplication regions (SAM...
Mean-gain and excess-noise measurements are presented for a 350 × 350 μm 2 P+/N-well/P-sub and a 270...
The paper is concerned with the parameter study of a new generation of micro-pixel avalanche photodi...
An extremely low noise Separate Absorption and Multiplication Avalanche Photodiode (SAM-APD), consis...
The responsivity, noise equivalent power, specific detectivity, shot noise and multiplication noise ...
Accurate detection of weak optical signals is a key function for a wide range of applications. A key...
A larger format photodiode array is always desirable for many LADAR imaging applications. However, a...
We provide a set of design considerations for In0.52Al0.48As based avalanche photodiodes (APDs) in a...
A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known a...
Avalanche multiplication and excess noise were measured on a series of Al0.6Ga0.4As p+in+ and n+ip+ ...
Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain...
We report the design, fabrication, and test of an InGaAs avalanche photodiode (APD) for 950-1650 nm ...