Proposed Model for Degradation of Gunn Diodes as Observed from Study of the I-V Characteristics

Thermal treatment of the MIS and intimate Ni/n-LEC GaAs Schottky barrier diodes

Turut, A
Nuhoglu, C
Ayyildiz, E
Saglam, M

September 1998

The thermal stability of Schottky diode parameters of the fabricated MIS and intimate Ni/n-LEC GaAs ...

Contact and temperature effects in Gunn oscillators.

Edridge, A. L.

November 2018

This study is concerned with contact properties of longitudinal and transverse (planar) Gunn devices...

Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN

Hassan, Z.
Yam, F. K.
Lee, Y. C.
Othman, S.

January 2005

In this work, we investigate the thermal stability and surface morphology of Ti metal contact on uni...

Proposed Model for Degradation of Gunn Diodes as Observed from Study of the I-V Characteristics

Gulati, R.
Chandra, I.
Sharma, B. L.

February 2014

The effect of heat treatment on the functional Gunn diodes has been investigated in the temperature ...

Effect of contact alloying behaviour on the electrical characteristic of GaxIn1-xSb diodes with gold coating

J.M. Peransin
J.F. Bresse
J. Michel
A. Boyer
E. Groubert

This paper reports on the characteristic changes of Au/GaxIn 1-xSb thermocompressed Gunn diodes afte...

Degradations in the electrical and structural characteristics of Schottky diodes and ohmic contacts to GaAs due to thermal aging

Kulkarni, A. K.
Post, B. M.

January 1985

The reliability of GaAs microwave devices is directly related to the integrity of Schottky and ohmic...

New techniques for the study of Gunn diode contacts

Gurney, William
Orton, J.W.

July 1974

Measurements are reported which provide direct evidence of the relationship between the frequency-te...

The effect of the metallurgical properties of the In-GaAs interface on the electrical properties of ohmic contacts to GaAs

Kulkarni, A. K.
Blankinship, T. J.

October 1982

The electrical properties of Al/In ohmic contacts to GaAs are correlated with the metallurgical prop...

Effect of annealing process parameters on the properties of AuGe ohmic contacts to GaAs

Kulkarni, A. K.
Lukowski, J. T.

December 1986

The control of the electrical and the structural properties of ohmic contacts to GaAs is extremely i...

Redistribution of constituent elements in Pd/Ge contacts to n-type GaAs using rapid thermal annealing

Jiun Tsuen Lai
Ya-Min Lee, J.

[[abstract]]Pd/Ge contact to n-type GaAs is performed by using electron-beam evaporation and rapid t...

Metallurgical and electrical properties of Au-Ge, Au/Au-Ge, Ni/Au-Ge and Ni/Au/Au-Ge ohmic contacts to GaAs

Iliadis, A.
Ηλιάδης, Α.

January 1980

Good quality ohmic contacts to GaAs microwave devices are of vital importance for the efficient oper...

Temperature dependence of the ideality factor of GaAs and Si Schottky diodes

Beling, CD
Fung, S
Chen, TP
Lee, TC
Au, HL

January 1995

Current-voltage-temperature (I-V-T) measurements of different metal-semiconductor diodes are carried...

Design and Fabrication of 35 GHz GaAs Gunn Diodes .

Chandra, Ishwar
Gulati, R.
Sharma, H. S.
Mohan, S.
Naik, A. A.
Saravanan, G. Sai

January 2013

The paper describes design and fabrication of GaAs 100 mW Gunn diodes for operation at ~35 GHz. As ...

Aging behavior of Au-based ohmic contacts to GaAs

Fatemi, Navid S.

July 1988

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with ...

SHORT COMMUNICATION Design and Fabrication of 35 GHz GaAs Gunn Diodes

A. A. Naik
Ishwar Ch
R. Gulati
H. S. Sharma
S. Mohan
G. Sai Saravanan

September 2016

The paper describes design and fabrication of GaAs I()(} mW Gunn diodes for operation at-35 GHz. As ...

Thermal treatment of the MIS and intimate Ni/n-LEC GaAs Schottky barrier diodes

Turut, A
Nuhoglu, C
Ayyildiz, E
Saglam, M

September 1998

The thermal stability of Schottky diode parameters of the fabricated MIS and intimate Ni/n-LEC GaAs ...

Contact and temperature effects in Gunn oscillators.

Edridge, A. L.

November 2018

This study is concerned with contact properties of longitudinal and transverse (planar) Gunn devices...

Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN

Hassan, Z.
Yam, F. K.
Lee, Y. C.
Othman, S.

January 2005

In this work, we investigate the thermal stability and surface morphology of Ti metal contact on uni...

Proposed Model for Degradation of Gunn Diodes as Observed from Study of the I-V Characteristics

Gulati, R.
Chandra, I.
Sharma, B. L.

February 2014

The effect of heat treatment on the functional Gunn diodes has been investigated in the temperature ...

Effect of contact alloying behaviour on the electrical characteristic of GaxIn1-xSb diodes with gold coating

J.M. Peransin
J.F. Bresse
J. Michel
A. Boyer
E. Groubert

This paper reports on the characteristic changes of Au/GaxIn 1-xSb thermocompressed Gunn diodes afte...

Degradations in the electrical and structural characteristics of Schottky diodes and ohmic contacts to GaAs due to thermal aging

Kulkarni, A. K.
Post, B. M.

January 1985

The reliability of GaAs microwave devices is directly related to the integrity of Schottky and ohmic...

New techniques for the study of Gunn diode contacts

Gurney, William
Orton, J.W.

July 1974

Measurements are reported which provide direct evidence of the relationship between the frequency-te...

The effect of the metallurgical properties of the In-GaAs interface on the electrical properties of ohmic contacts to GaAs

Kulkarni, A. K.
Blankinship, T. J.

October 1982

The electrical properties of Al/In ohmic contacts to GaAs are correlated with the metallurgical prop...

Effect of annealing process parameters on the properties of AuGe ohmic contacts to GaAs

Kulkarni, A. K.
Lukowski, J. T.

December 1986

The control of the electrical and the structural properties of ohmic contacts to GaAs is extremely i...

Redistribution of constituent elements in Pd/Ge contacts to n-type GaAs using rapid thermal annealing

Jiun Tsuen Lai
Ya-Min Lee, J.

[[abstract]]Pd/Ge contact to n-type GaAs is performed by using electron-beam evaporation and rapid t...

Metallurgical and electrical properties of Au-Ge, Au/Au-Ge, Ni/Au-Ge and Ni/Au/Au-Ge ohmic contacts to GaAs

Iliadis, A.
Ηλιάδης, Α.

January 1980

Good quality ohmic contacts to GaAs microwave devices are of vital importance for the efficient oper...

Temperature dependence of the ideality factor of GaAs and Si Schottky diodes

Beling, CD
Fung, S
Chen, TP
Lee, TC
Au, HL

January 1995

Current-voltage-temperature (I-V-T) measurements of different metal-semiconductor diodes are carried...

Design and Fabrication of 35 GHz GaAs Gunn Diodes .

Chandra, Ishwar
Gulati, R.
Sharma, H. S.
Mohan, S.
Naik, A. A.
Saravanan, G. Sai

January 2013

The paper describes design and fabrication of GaAs 100 mW Gunn diodes for operation at ~35 GHz. As ...

Aging behavior of Au-based ohmic contacts to GaAs

Fatemi, Navid S.

July 1988

Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with ...

SHORT COMMUNICATION Design and Fabrication of 35 GHz GaAs Gunn Diodes

A. A. Naik
Ishwar Ch
R. Gulati
H. S. Sharma
S. Mohan
G. Sai Saravanan

September 2016

The paper describes design and fabrication of GaAs I()(} mW Gunn diodes for operation at-35 GHz. As ...

Thermal treatment of the MIS and intimate Ni/n-LEC GaAs Schottky barrier diodes

Turut, A
Nuhoglu, C
Ayyildiz, E
Saglam, M

September 1998

The thermal stability of Schottky diode parameters of the fabricated MIS and intimate Ni/n-LEC GaAs ...

Contact and temperature effects in Gunn oscillators.

Edridge, A. L.

November 2018

This study is concerned with contact properties of longitudinal and transverse (planar) Gunn devices...

Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN

Hassan, Z.
Yam, F. K.
Lee, Y. C.
Othman, S.

January 2005

In this work, we investigate the thermal stability and surface morphology of Ti metal contact on uni...

Proposed Model for Degradation of Gunn Diodes as Observed from Study of the I-V Characteristics

Abstract

Extracted data

Proposed Model for Degradation of Gunn Diodes as Observed from Study of the I-V Characteristics

Abstract

Extracted data

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