In this thesis, the properties of ferroelectric domains and domain walls in Pb(Zr0.2Ti0.8)O3 are studied in three research avenues using piezoresponse force microscopy. In the first, the switching dynamics are investigated in the context of crackling physics. The importance of establishing the dynamical regime of domain wall motion at which the system is driven is revealed and tentative spatio-temporal correlations of switching event in the creep regimes recently predicted theoretically are observed. In the second, correlations are studied between the magnitude of domain wall currents and geometrical distortions of the walls, which are both affected by the defect density. These results suggest that the defects affecting the conduction do no...
International audienceTwo Pb(ZrTi)O samples of different thickness and domain configuration have bee...
International audienceTwo Pb(ZrTi)O samples of different thickness and domain configuration have bee...
A lead zirconate titanate Pb(Zr0.4Ti0.6)O 3 (PZT40/60) film was deposited on a Pt(111)/Ti/SiO 2/Si(1...
In this thesis, the properties of ferroelectric domains and domain walls in Pb(Zr0.2Ti0.8)O3 are stu...
Two Pb(Zr0.20Ti0.80)O3 samples of different thickness and domain configuration have been studied. Th...
Ferroelectric oxide thin films are currently used in ultra high density non-volatile memories (FeRAM...
Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric ...
AbstractUnderstanding and controlling the motion, stability, and equilibrium configuration of ferroe...
Ferroelectric materials have found a wide range of applications in data storage devices, sensors and...
Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric ...
The domain structure of ferroelectric and multiferroic materials can have a significant effect on pi...
The domain structure of ferroelectric and multiferroic materials can have a significant effect on pi...
The domain structure of ferroelectric and multiferroic materials can have a significant effect on pi...
Domain wall movement at and near engineered 10°, 15°, and 24° tilt and 10° and 30° twist grain bound...
The dynamics of complex topological defects in ferroelectric materials is explored using automated e...
International audienceTwo Pb(ZrTi)O samples of different thickness and domain configuration have bee...
International audienceTwo Pb(ZrTi)O samples of different thickness and domain configuration have bee...
A lead zirconate titanate Pb(Zr0.4Ti0.6)O 3 (PZT40/60) film was deposited on a Pt(111)/Ti/SiO 2/Si(1...
In this thesis, the properties of ferroelectric domains and domain walls in Pb(Zr0.2Ti0.8)O3 are stu...
Two Pb(Zr0.20Ti0.80)O3 samples of different thickness and domain configuration have been studied. Th...
Ferroelectric oxide thin films are currently used in ultra high density non-volatile memories (FeRAM...
Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric ...
AbstractUnderstanding and controlling the motion, stability, and equilibrium configuration of ferroe...
Ferroelectric materials have found a wide range of applications in data storage devices, sensors and...
Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric ...
The domain structure of ferroelectric and multiferroic materials can have a significant effect on pi...
The domain structure of ferroelectric and multiferroic materials can have a significant effect on pi...
The domain structure of ferroelectric and multiferroic materials can have a significant effect on pi...
Domain wall movement at and near engineered 10°, 15°, and 24° tilt and 10° and 30° twist grain bound...
The dynamics of complex topological defects in ferroelectric materials is explored using automated e...
International audienceTwo Pb(ZrTi)O samples of different thickness and domain configuration have bee...
International audienceTwo Pb(ZrTi)O samples of different thickness and domain configuration have bee...
A lead zirconate titanate Pb(Zr0.4Ti0.6)O 3 (PZT40/60) film was deposited on a Pt(111)/Ti/SiO 2/Si(1...