Add to ORKGThis paper attempts to give a detailed review and provide a complete description on the technology, physics and modeling of various Multi-Gate MOSFETs. It consists of a synopsis of mathematical depiction of the potential distribution along the channel of various MG-MOSFETs which can be made to enable fast computer analysis of device behavior. This serves a link between process technology and circuit design. This review demonstrates that this technology is strongly desired in nanoscale domain and there is a plenty demand for analytical model which can explain the physics and operation of the devices perfectly
In this work, we analyze the conduction mechanisms and the electrical performance of intrinsic and d...
This proposed work covers the effect of dual halo structure with dual dielectric. A 2-D analytical m...
VLSI technology is constantly evolving towards smaller line widths. In this paper analytical modelin...
This paper attempts to give a detailed review and provide a complete description on the technology, ...
As bulk CMOS scaling is approaching the limit that is imposed by gate oxide tunneling, body doping, ...
L'escalat dels transistors MOSFET convencionals ha portat a aquests dispositius a la nanoescala per ...
Silicon nanowire based multiple gate metal oxide field effect transistors(MG-MOSFET) appear as repla...
Summarization: Analog/RF performance of nanoscale triple gate FinFETs and planar single-gate (SG) an...
In this paper, we have presented modeling of drain current for single material surrounded gate SOI M...
AbstractIn this paper, a 2D analytical model for the Dual Material Surrounding Gate MOSFET (DMSG) by...
In this paper, we have presented modeling of drain current for single material surrounded gate SOI M...
The nano-scale devices face a major issue i.e Short Channel Effects, as a result of which the perfor...
This paper covers the fundamentals of SDGFETs and ADGFETs. Drain modern fashions for unmarried gate ...
Aggressive scaling of Metal-oxide-semiconductor Field Effect Transistors (MOSFET) have been conducte...
Square gate all around MOSFETs are a very promising device structures allowing to continue scaling d...
In this work, we analyze the conduction mechanisms and the electrical performance of intrinsic and d...
This proposed work covers the effect of dual halo structure with dual dielectric. A 2-D analytical m...
VLSI technology is constantly evolving towards smaller line widths. In this paper analytical modelin...
This paper attempts to give a detailed review and provide a complete description on the technology, ...
As bulk CMOS scaling is approaching the limit that is imposed by gate oxide tunneling, body doping, ...
L'escalat dels transistors MOSFET convencionals ha portat a aquests dispositius a la nanoescala per ...
Silicon nanowire based multiple gate metal oxide field effect transistors(MG-MOSFET) appear as repla...
Summarization: Analog/RF performance of nanoscale triple gate FinFETs and planar single-gate (SG) an...
In this paper, we have presented modeling of drain current for single material surrounded gate SOI M...
AbstractIn this paper, a 2D analytical model for the Dual Material Surrounding Gate MOSFET (DMSG) by...
In this paper, we have presented modeling of drain current for single material surrounded gate SOI M...
The nano-scale devices face a major issue i.e Short Channel Effects, as a result of which the perfor...
This paper covers the fundamentals of SDGFETs and ADGFETs. Drain modern fashions for unmarried gate ...
Aggressive scaling of Metal-oxide-semiconductor Field Effect Transistors (MOSFET) have been conducte...
Square gate all around MOSFETs are a very promising device structures allowing to continue scaling d...
In this work, we analyze the conduction mechanisms and the electrical performance of intrinsic and d...
This proposed work covers the effect of dual halo structure with dual dielectric. A 2-D analytical m...
VLSI technology is constantly evolving towards smaller line widths. In this paper analytical modelin...