Fabrication of T Molds with Nano-scale Features for Nanoimprint Lithography Applications

[[abstract]]Recent advances in microlithography have made the patterning and fabrication of microprocessors and memory chips with a critical feature size of less than 65 nm possible. Only nanoimprint lithography offers the advantages of being low-cost, high-throughput production methods suitable for the pattern transfer of structures of less than 30 nm over large areas. Nanowire has interesting prospects for future nanoelectronics applications. The aspect ratio of material fabricated by nanoimprint lithography is always low. Therefore nanowire has a large resistivity. The development of T molds with features of less than 30 nm and a high aspect ratio suitable for nanoimprint lithographies is anticipated. We can therefore anticipate the production of a T mold with features of 25 nm and high aspect ratio, suitable for use in nanoimprint lithography. In this study we discuss methods for the fabrication of just such a T mold using EBL and inductively coupled plasma reactive ion etching