Development of High Q-factor Inductor Utilizing Implantable Microchip Integration Technology

[[abstract]]植入式元件是利用電感傳輸能量，能量傳輸與電感關係，可藉由電感的品質因子(Q-factor)探討能量傳遞效果，當Q-factor越高，表示電感傳遞能量效果越佳，因此，如何製作一高Q-factor電感為一重要課題。 本研究提出一新製程方式，以增加電感線圈厚度方式提升電感之Q-factor。藉由模擬軟體測試，電感在有限的大小限制下，增加電感線圈厚度能夠有效提升電感Q-factor。模擬結果顯示，在頻率1 MHz下，電感厚度從2 μm增加至50 μm，Q-factor提升9 99 ~ 24 12倍。在製程方面，以Parylene-C作為基材，利用皮秒雷射加工取代傳統蒸鍍製程，製作厚度50 μm之電感線圈，完成可撓式高Q-factor電感元件。 根據實際樣本量測結果，在電感線圈外徑為20 mm、線寬為1000 μm條件下，厚度從2 μm增加至50 μm，其Q-factor提升約5 83倍；電感線圈外徑為10 mm、線寬為500 μm條件下，厚度從2 μm增加至50 μm，其Q-factor提升約10 13倍；電感線圈最大外4 5 mm、線寬為100 μm條件下，厚度從2 μm增加至50 μm，其Q-factor提升約21 41倍，由此結果得知，增加電感線圈厚度方式提升電感Q-factor是可行的。[[abstract]]The implantable device is use inductor to transfer energy the energy transmission and inductor’s relationship can investigate the energy transfer effect by inductor’s quality factor (Q-factor) When Q-factor value becomes higher the inductor’s energy transfer effect can be better Thus how to establish a high Q-factor's inductor is important goal This study presents a novel fabrication method to enhance the Q-factor of inductors We modeled the test device by simulation software The inductance was designed to a fixed size increasing the thickness of the inductor can effectively enhance the Q-factor The simulation result shows that the inductor’s thickness increase from 2 μm to 50 μm the Q-factor enhance 9 99x ~ 24 12x at a 1 MHz frequency The fabrication process used Parylene-C as a polymeric substrate We use picosecond laser processing to replace the traditional evaporation process making the inductor’s thickness of 50 μm The result shows outer diameter of 20 mm width of 1000 μm and thickness from 2 μm to 50 μm of the inductor’s Q-factor increased approximately 5 83x Outer diameter of 10 mm width of 500 μm and thickness from 2 μm to 50 μm of the inductor’s Q-factor increased approximately 10 13x Outer diameter of 4 5 mm width of 100 μm and thickness from 2 μm to 50 μm of the inductor’s Q-factor increased approximately 21 41