The Study of Zn doped CuInSe2 P-N junction

[[abstract]]本論文使用兩種方法成長CuInSe2:Zn的p-n同質接面薄膜太陽能電池， CaseA我們先用共濺鍍方法沉積Cu、In和Zn前驅層，然後再使用硒化法形成最終的CuInSe2:Zn吸收層，藉由改變濺鍍Zn的瓦數及Zn靶材上蓋(Shutter)開啟的時間來控制Zn擴散深度。 CaseB是先用共濺鍍方法沉積CuIn前驅層，再使用硒化法形成CuInSe2吸收層，然後使用濺鍍法將Zn濺鍍至已完成之CuInSe2薄膜上，再使用退火製程形成最終的CuInSe2:Zn吸收層，藉由改變退火溫度及退火時間來控制Zn的擴散深度。 我們已成功研製出CuInSe2:Zn的p-n同質接面薄膜太陽電池，其他如鈉玻璃基板、鋁氧化鋅透明導電層，金屬鉬背部電極使用和金屬銀正面電極。且由電流-電壓特性分析得知其填充因子為26.16%、開路電壓為0.04 V、短路電流為1.41 mA、效率為0.18％，並且由C-V量測計算其空乏區大小約22.4 nm，因此元件特性仍需藉由各層材料性質之改善來提升。CuInSe2:Zn p-n同質接面的接面特性分析使用電流-電壓量測及電容-電壓量測，薄膜特性的研究則是使用XRD、EDS及SEM。[[abstract]]In this study, we use two methods to grows CuInSe2: Zn p-n homojunction thin film solar cell. In the caseA, we first fabricated co-sputter Cu、In and Zn precursor layers and then use selenization method to form ultimate CuInSe2:Zn absorbent layer. The Zn diffusion depth is controlled by sputtering power of Zn and Zn target shutter open time. In the caseB, we first fabricated co-sputter Cu and In precursor layer and then use selenization method to form CuInSe2 absorbent layer. Next step, we use sputter Zn on the surface of CuInSe2 thin films and then use anneal the film to form ultimate CuInSe2:Zn absorbent layer. The Zn diffusion depth is controlled by annealing temperature and annealing time. The CuInSe2: Zn p-n homojunction thin film solar cell is successfully fabricated in this study, The soda-lime glass, AZO, Mo and Ag is used as our substrate, window layer, back contact metal and front contact metal,respectively. The current-voltage measurement is use to fill factor(F.F.), open circuit voltage(Voc), short circuit current(Isc) and efficiency, which are found to be 26.16 %, 0.04 V, 1.41 mA and 0.18％, respectively. It’s essential to improve properties of each layers of cell in order to get higher quantum efficiencies. I-V and C-V measurement are used to analyze the junction characterization of CuInSe2: Zn p-n homojunction, which film quality is investigated by the XRD, EDS and SEM