Plasma-Etching for Emission efficiency of Light-Emitting Diodes

[[abstract]]目前提高發光二極體的發光效率之方法多半利用粗化製程去提升亮度，本篇論文中使用了粗化製程搭配奈米金屬進而對發光二極體之發光效率進行相關的研究。首先利用半導體製程中的黃光製程技術和ICP乾式蝕刻技術，在藍光InGaN發光二極體的P型氮化鎵表面，製作出粗糙之凹槽的表面微米圓形孔洞陣列結構。使用濺鍍沉積技術將奈米金與二氧化矽沉積於微米圓形孔洞內，利用金屬薄膜與主動層之間距對於表面電漿共振現象之關係，搭配粗化製程藉以有效之提升發光效率。其結果顯示使用其發光效率提升了約46%左右。[[abstract]]In this paper, to promote the Light Emitting Diode luminous efficiency, The coarsening process using nano-metals with which to light-emitting diode light-emitting efficiency of research. Using the semiconductor process in yellow light process technology and ICP dry type etching technique, in the blue light InGaN Light Emitting Diode P nitriding gallium surface, manufactures the rough scoop channel's superficial micron circular hole array architecture. The use splashes to plate the deposition technology a nanometer gold and silicon dioxide deposition in the micron circular hole, so as to spacing of use metallic film and driving level regarding the superficial plasma relations of resonance effect, So as to matches the rough process the effective promotion luminous efficienc