Structural Properties and Chemical Composition of SnS2 Thin Films

Due to optimal band gap (2.2 eV), high free carrier mobility tin disulfide (SnS2) thin films are considered as a promising material for application in microelectronic devices. For example, n-type SnS2 could be used as solar cells window layer instead of conventional CdS thin films. Also, a specific two-dimensional 2D structure of the SnS2 crystallites makes it possible to use this material in next generation electronics. Other important advantages of SnS related compounds are their low-cost, earth abundance and non-toxicity