Three-dimensional topological insulator based on a strained HgTe film

We investigated electron and hole transport in a three-dimensional topological insulator based on a high-mobility (up to 4 × 105 cm2/V·s) 80-nm-thick strained mercury telluride film. The presence of the gate electrode made it possible to shift the position of the Fermi energy from the valence band through the bulk gap to the conduction band. Specific features observed in classical and quantum transport allowed us to disentangle the contributions to the conductivity by bulk holes, bulk electrons, and the Dirac electrons on the surfaces of the film