We demonstrate the direct detection of spontaneous polarization in the wurtzite crystal phase of gallium-arsenide (GaAs) nanowires. Using differential phase contrast microscopy (DPC) in a scanning transmission electron microscope, we map the differences in charge distribution between the zinc-blende and wurtzite crystal phases and use twin defects in the zinc-blende phase to quantify the polarization strength. The value of 2.7 × 10−3 C/m2 found for the polarization strength matches well with theoretical predictions
Semiconductor nanowires are often regarded as having potential to be building blocks for novel appli...
III-V nanowires are fascinating quasi one-dimensional crystals, which have a huge potential as optoe...
The formation of wurtzite (WZ) phase in III-V nanowires (NWs) such as GaAs and InP is a complication...
We demonstrate the direct detection of spontaneous polarization in the wurtzite crystal phase of gal...
We report on a crystal phase-dependent photoluminescence (PL) polarization effect in individual wurt...
We investigate the Raman intensity of EH2 phonons in wurtzite GaAs nanowire ensembles as well as sin...
III-V compound semiconductor nanowires are generally characterized by the coexistence of zincblende ...
The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blen...
We present a combined photoluminescence and transmission electron microscopy study of single GaAs na...
Localized and polarized photoluminescence spectra are observed in single GaAs nanowires with mixed z...
Màster en Nanociència i Nanotecnologia. Curs 2007-2008. Directors: Francesca Peiró i Martínez and Jo...
In this work, we report an optical method for characterizing crystal phases along single-semiconduct...
We report GaAs/AlGaAs nanowires in the one-dimensional (1D) quantum limit. The ultrathin wurtzite Ga...
We report on the experimental determination of the spontaneous polarization of wurtzite- (Mg,Zn)O by...
International audienceHigh angle annular dark field scanning transmission electron microscopy is use...
Semiconductor nanowires are often regarded as having potential to be building blocks for novel appli...
III-V nanowires are fascinating quasi one-dimensional crystals, which have a huge potential as optoe...
The formation of wurtzite (WZ) phase in III-V nanowires (NWs) such as GaAs and InP is a complication...
We demonstrate the direct detection of spontaneous polarization in the wurtzite crystal phase of gal...
We report on a crystal phase-dependent photoluminescence (PL) polarization effect in individual wurt...
We investigate the Raman intensity of EH2 phonons in wurtzite GaAs nanowire ensembles as well as sin...
III-V compound semiconductor nanowires are generally characterized by the coexistence of zincblende ...
The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blen...
We present a combined photoluminescence and transmission electron microscopy study of single GaAs na...
Localized and polarized photoluminescence spectra are observed in single GaAs nanowires with mixed z...
Màster en Nanociència i Nanotecnologia. Curs 2007-2008. Directors: Francesca Peiró i Martínez and Jo...
In this work, we report an optical method for characterizing crystal phases along single-semiconduct...
We report GaAs/AlGaAs nanowires in the one-dimensional (1D) quantum limit. The ultrathin wurtzite Ga...
We report on the experimental determination of the spontaneous polarization of wurtzite- (Mg,Zn)O by...
International audienceHigh angle annular dark field scanning transmission electron microscopy is use...
Semiconductor nanowires are often regarded as having potential to be building blocks for novel appli...
III-V nanowires are fascinating quasi one-dimensional crystals, which have a huge potential as optoe...
The formation of wurtzite (WZ) phase in III-V nanowires (NWs) such as GaAs and InP is a complication...