Add to ORKGThe International Workshop on Nitride Semiconductors (IWN) is a biennial academic conference in the field of group III nitride research. The IWN and the International Conference on Nitride Semiconductors (ICNS) are held in alternating years and cover similar subject areas
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Materials Science and Engineer...
Indium gallium nitride (InxGa1-xN) materials have held great potential for the optoelectronic indust...
The effect of the in situ substrate nitridation time on the electrical, structural and optical prope...
Cataloged from PDF version of article.The strain analysis of GaN film on nitridated Si(111) substrat...
Cataloged from PDF version of article.The InxGa1-xN epitaxial layers, with indium (x) concentration ...
This work studies the effect of four different types of buffer layers on the structural and optical ...
Due to an increasing demand of developing III-nitride optoelectronics on silicon substrates, it is n...
InGaN layers were grown simultaneously on (11¯22) GaN and (0001) GaN templates by metalorganic vapou...
We developed and evaluated NSAG techniques for Group III-Nitrides as a way to mitigate the various d...
InN layers: MBE growth issues Growth of InN-based thin films: InN/InGaN QWS on GaN Growth of InN...
Les puits quantiques InGaN/GaN montrent la plus grande efficacité connue dans le bleu-UV et le défi ...
Gallium nitride (GaN) and its related alloys - aluminium gallium nitride (AlGaN) and indium gallium ...
Transmission electron microscope (TEM) analysis has been carried out for the growth process in thick...
We report on the growth of In-rich InGaN layers on GaN/sapphire templates. InGaN layers of various I...
With the aim of investigating the possible integration of optoelectronic devices, epitaxial GaN laye...
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Materials Science and Engineer...
Indium gallium nitride (InxGa1-xN) materials have held great potential for the optoelectronic indust...
The effect of the in situ substrate nitridation time on the electrical, structural and optical prope...
Cataloged from PDF version of article.The strain analysis of GaN film on nitridated Si(111) substrat...
Cataloged from PDF version of article.The InxGa1-xN epitaxial layers, with indium (x) concentration ...
This work studies the effect of four different types of buffer layers on the structural and optical ...
Due to an increasing demand of developing III-nitride optoelectronics on silicon substrates, it is n...
InGaN layers were grown simultaneously on (11¯22) GaN and (0001) GaN templates by metalorganic vapou...
We developed and evaluated NSAG techniques for Group III-Nitrides as a way to mitigate the various d...
InN layers: MBE growth issues Growth of InN-based thin films: InN/InGaN QWS on GaN Growth of InN...
Les puits quantiques InGaN/GaN montrent la plus grande efficacité connue dans le bleu-UV et le défi ...
Gallium nitride (GaN) and its related alloys - aluminium gallium nitride (AlGaN) and indium gallium ...
Transmission electron microscope (TEM) analysis has been carried out for the growth process in thick...
We report on the growth of In-rich InGaN layers on GaN/sapphire templates. InGaN layers of various I...
With the aim of investigating the possible integration of optoelectronic devices, epitaxial GaN laye...
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Materials Science and Engineer...
Indium gallium nitride (InxGa1-xN) materials have held great potential for the optoelectronic indust...
The effect of the in situ substrate nitridation time on the electrical, structural and optical prope...