Different approaches have arisen aiming to exceed the Shockley-Queisser efficiency limit of solar cells. Particularly, stacking QD layers allows exploiting their unique properties, not only for intermediate-band solar cells or multiple exciton generation, but also for tandem cells in which the tunability of QD properties through the capping layer (CL) could be very useful
The optical and structural properties of InAs/GaAs quantum dots (QD) are strongly modified through t...
Multi-junction solar cells made by assembling semiconductor materials with different bandgap energie...
In this work we report the stacking of 50 InAs/GaAs quantum dot layers with a GaAs spacer thickness ...
Different approaches have recently arisen aiming to exceed the Shockley-Queisser efficiency limit. P...
The impact of using thin GaAs(Sb)(N) capping layers (CLs) on InAs/GaAs quantum dots (QDs) is investi...
This work reports on the benefits from using thin GaAsSb capping layers (CLs) on InAs/GaAs quantum d...
Recently, quantum dots (QDs) have been drawing an increasing interest as an alternative appr...
abstract: The development of high efficiency III-V solar cells is needed to meet the demands of a pr...
One of the primary challenges facing quantum dot (QD)-based intermediate band solar cells is the sho...
Research into the formation of InAs quantum dots (QDs) in GaAs using the metalorganic vapor phase ep...
The optical and structural properties of InAs/GaAs quantum dots (QD) are strongly modified through t...
Several attempts have been carried out to manufacture intermediate band solar cells (IBSC) by means ...
<div class="aip-paragraph">We systematically study the influence of group V intermixing on the struc...
The use of high-growth-temperature GaAs spacer layers is demonstrated to significantly enhance the p...
The efficiency of a solar cell can be substantially increased by opening new energy gaps within the ...
The optical and structural properties of InAs/GaAs quantum dots (QD) are strongly modified through t...
Multi-junction solar cells made by assembling semiconductor materials with different bandgap energie...
In this work we report the stacking of 50 InAs/GaAs quantum dot layers with a GaAs spacer thickness ...
Different approaches have recently arisen aiming to exceed the Shockley-Queisser efficiency limit. P...
The impact of using thin GaAs(Sb)(N) capping layers (CLs) on InAs/GaAs quantum dots (QDs) is investi...
This work reports on the benefits from using thin GaAsSb capping layers (CLs) on InAs/GaAs quantum d...
Recently, quantum dots (QDs) have been drawing an increasing interest as an alternative appr...
abstract: The development of high efficiency III-V solar cells is needed to meet the demands of a pr...
One of the primary challenges facing quantum dot (QD)-based intermediate band solar cells is the sho...
Research into the formation of InAs quantum dots (QDs) in GaAs using the metalorganic vapor phase ep...
The optical and structural properties of InAs/GaAs quantum dots (QD) are strongly modified through t...
Several attempts have been carried out to manufacture intermediate band solar cells (IBSC) by means ...
<div class="aip-paragraph">We systematically study the influence of group V intermixing on the struc...
The use of high-growth-temperature GaAs spacer layers is demonstrated to significantly enhance the p...
The efficiency of a solar cell can be substantially increased by opening new energy gaps within the ...
The optical and structural properties of InAs/GaAs quantum dots (QD) are strongly modified through t...
Multi-junction solar cells made by assembling semiconductor materials with different bandgap energie...
In this work we report the stacking of 50 InAs/GaAs quantum dot layers with a GaAs spacer thickness ...