Add to ORKGColor poster with text and images.This study explores the effects of the process parameters on the growth characteristics of silicon carbide nanowires, including length, diameter, directionality, and the possibility of controlling these parameters.University of Wisconsin--Eau Claire Office of Research and Sponsored Programs
Single crystalline silicon carbide nanowires (SiCNWs) growing along 〈111〉 direction were synthesized...
Silicon carbide is one of the promising materials for the fabrication of various one- and two-dimens...
Silicon carbide (SiC) nanowires were grown directly on Si substrates by thermal evaporation of WO3 a...
Color poster with text, photographs, images, and charts.The purpose of this study was to the electri...
Nanowires (NWs) open promising near-future perspectives for the design and fabrication of nano-scale...
Silicon carbide nanowires are valuable for electronic and optical applications, due to their high me...
Silicon carbide (SiC) nanowires were synthesized at 900°C by the laser ablation technique. The growt...
ABSTRACT: This paper reports quantitative mechanical characterization of silicon carbide (SiC) nanow...
International audienceThe objective of this study is to grow Si-SiC core-shell nanowires (NWs) for b...
In this paper, a simple method to synthesize silicon carbide (SiC) nanoribbons is presented. Silicon...
SiC nanowires (NWs) are commonly prepared in a Si-C-N system, but its formation mechanism is not ful...
One-dimensional materials have become an attractive field of research due to their potential applica...
International audienceOne-dimensional (1D) nanostructures such as nanowires or nanotubes have attrac...
This paper reports quantitative mechanical characterization of silicon carbide (SiC) nanowires (NWs)...
Single crystalline silicon carbide nanowires (SiCNWs) growing along 〈111〉 direction were synthesized...
Silicon carbide is one of the promising materials for the fabrication of various one- and two-dimens...
Silicon carbide (SiC) nanowires were grown directly on Si substrates by thermal evaporation of WO3 a...
Color poster with text, photographs, images, and charts.The purpose of this study was to the electri...
Nanowires (NWs) open promising near-future perspectives for the design and fabrication of nano-scale...
Silicon carbide nanowires are valuable for electronic and optical applications, due to their high me...
Silicon carbide (SiC) nanowires were synthesized at 900°C by the laser ablation technique. The growt...
ABSTRACT: This paper reports quantitative mechanical characterization of silicon carbide (SiC) nanow...
International audienceThe objective of this study is to grow Si-SiC core-shell nanowires (NWs) for b...
In this paper, a simple method to synthesize silicon carbide (SiC) nanoribbons is presented. Silicon...
SiC nanowires (NWs) are commonly prepared in a Si-C-N system, but its formation mechanism is not ful...
One-dimensional materials have become an attractive field of research due to their potential applica...
International audienceOne-dimensional (1D) nanostructures such as nanowires or nanotubes have attrac...
This paper reports quantitative mechanical characterization of silicon carbide (SiC) nanowires (NWs)...
Single crystalline silicon carbide nanowires (SiCNWs) growing along 〈111〉 direction were synthesized...
Silicon carbide is one of the promising materials for the fabrication of various one- and two-dimens...
Silicon carbide (SiC) nanowires were grown directly on Si substrates by thermal evaporation of WO3 a...