Add to ORKGThe II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Group II and Group IV element replace the Group III element. We report on the fabrication and structural and optoelectronic characterization of earth-abundant II-IV-nitrides: ZnSn_xGe_(1-x)N_2. The sputtered thin-films show potential for ZnSn_xGe_(1-x)N_2 to be tunable semiconductor photovoltaic absorber materials
Zinc tin nitride (ZnSnN2) thin films have been deposited by reactive magnetron co-sputtering at room...
ZnSn_xGe_(1−x)N_2 alloys are chemically miscible semiconductor compounds with potential application ...
By literature reports, ZnSnN2 has been pointed out as a potential high bandgap semiconductor materia...
The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Gr...
Abstract — Large-scale energy demands will require low-cost, earth-abundant materials for high effi...
Large-scale energy demands will require low-cost, earth-abundant materials for high efficiency solar...
We report on the fabrication and structural and optoelectronic characterization of II-IV-nitride ZnS...
International audienceThe nitrides of elements III such as AlxGayIn1-x-yN have been widely studied f...
We report on the fabrication and structural and optoelectronic characterization of II-IV-nitride ZnS...
In order to cater to modern day photovoltaic and solar needs, semiconductor materials which are eart...
This thesis details explorations of the materials and device fabrication of Zn-IV-Nitride thin-film...
This investigation is motivated by the need for new visible frequency direct bandgap semiconductor m...
The II-IV-nitrides ZnSiN2, ZnGeN2 and ZnSnN2 represent a semiconductors family close to the III-nitr...
Les nitrures d'éléments II-IV ZnSiN2, ZnGeN2 et ZnSnN2 forment une famille de semi-conducteurs liés ...
ZnSnN_2, a new earth-abundant semiconductor, is synthesized and characterized for use as a photovolt...
Zinc tin nitride (ZnSnN2) thin films have been deposited by reactive magnetron co-sputtering at room...
ZnSn_xGe_(1−x)N_2 alloys are chemically miscible semiconductor compounds with potential application ...
By literature reports, ZnSnN2 has been pointed out as a potential high bandgap semiconductor materia...
The II-IV-nitrides are an alloy series analogous to the well-characterized III-nitrides, where a Gr...
Abstract — Large-scale energy demands will require low-cost, earth-abundant materials for high effi...
Large-scale energy demands will require low-cost, earth-abundant materials for high efficiency solar...
We report on the fabrication and structural and optoelectronic characterization of II-IV-nitride ZnS...
International audienceThe nitrides of elements III such as AlxGayIn1-x-yN have been widely studied f...
We report on the fabrication and structural and optoelectronic characterization of II-IV-nitride ZnS...
In order to cater to modern day photovoltaic and solar needs, semiconductor materials which are eart...
This thesis details explorations of the materials and device fabrication of Zn-IV-Nitride thin-film...
This investigation is motivated by the need for new visible frequency direct bandgap semiconductor m...
The II-IV-nitrides ZnSiN2, ZnGeN2 and ZnSnN2 represent a semiconductors family close to the III-nitr...
Les nitrures d'éléments II-IV ZnSiN2, ZnGeN2 et ZnSnN2 forment une famille de semi-conducteurs liés ...
ZnSnN_2, a new earth-abundant semiconductor, is synthesized and characterized for use as a photovolt...
Zinc tin nitride (ZnSnN2) thin films have been deposited by reactive magnetron co-sputtering at room...
ZnSn_xGe_(1−x)N_2 alloys are chemically miscible semiconductor compounds with potential application ...
By literature reports, ZnSnN2 has been pointed out as a potential high bandgap semiconductor materia...