With the widespread application of junction transistors in switching applications, the need for a general method of analysis useful in the region of collector voltage saturation has become apparent. Linear equivalent circuits using lumped elements have long been used for small signal calculations of normally biased transistors, but a comparable method for saturated transistors has been lacking. Recently Linvill proposed the method of lumped models which allow the analysis of complex switching problems with the case of linear circuit calculations. The method is shown to be equivalent to a well-known linear equivalent circuit under normal bias conditions. Examples of the application of the method and the use of approximations are drawn from...
The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to ...
The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to ...
The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to ...
With the widespread application of junction transistors in switching applications, the need for a ge...
With the widespread application of junction transistors in switching applications, the need for a ge...
With the widespread application of junction transistors in switching applications, the need for a g...
With the widespread application of junction transistors in switching applications, the need for a g...
The lumped-model characterization for junction transistors has been extended to current ranges where...
The theory of small signal linear junction transistor amplifiers is extended to develop design techn...
Junction Transistors explains the operation and characterization of junction transistors to a point ...
The Linvill transistor model may be used for transistor synthesis if the model accurately approximat...
The Linvill transistor model may be used for transistor synthesis if the model accurately approximat...
Transient analysis of bipolar transistors including built-in field and recombination in the base is ...
Transient analysis of bipolar transistors including built-in field and recombination in the base is ...
Transient analysis of bipolar transistors including built-in field and recombination in the base is ...
The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to ...
The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to ...
The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to ...
With the widespread application of junction transistors in switching applications, the need for a ge...
With the widespread application of junction transistors in switching applications, the need for a ge...
With the widespread application of junction transistors in switching applications, the need for a g...
With the widespread application of junction transistors in switching applications, the need for a g...
The lumped-model characterization for junction transistors has been extended to current ranges where...
The theory of small signal linear junction transistor amplifiers is extended to develop design techn...
Junction Transistors explains the operation and characterization of junction transistors to a point ...
The Linvill transistor model may be used for transistor synthesis if the model accurately approximat...
The Linvill transistor model may be used for transistor synthesis if the model accurately approximat...
Transient analysis of bipolar transistors including built-in field and recombination in the base is ...
Transient analysis of bipolar transistors including built-in field and recombination in the base is ...
Transient analysis of bipolar transistors including built-in field and recombination in the base is ...
The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to ...
The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to ...
The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to ...