Inter-cell interference (ICI) is one of the main obstacles to precise programming (i.e., writing) of a flash memory. In the presence of ICI, the voltage level of a cell might increase unexpectedly if its neighboring cells are programmed to high levels. For q-ary cells, the most severe ICI arises when three consecutive cells are programmed to levels high - low - high, represented as (q-1)0(q-1), resulting in an unintended increase in the level of the middle cell and the possibility of decoding it incorrectly as a nonzero value. ICI-free codes are used to mitigate this phenomenon by preventing the programming of any three consecutive cells as (q-1)0(q-1). In this work, we extend ICI-free codes in two directions. First, we consider binary bala...
Flash memories are, by far, the most important type of non -volatile memory in use today. They are e...
Abstract — Several physical effects that limit the reliability and performance of Multilevel Flash m...
A write-once memory (WOM) is a storage device that consists of cells that can take on q values, with...
Inter-cell interference (ICI) is one of the main obstacles to precise programming (i.e., writing) of...
In coding theory and information theory, constrained codes have been studied actively for numerous a...
High-density flash memories suffer from inter-cell interference (ICI) which threatens the reliabilit...
Non-volatile memories (NVMs) have attracted considerable attention as data storage media because of ...
Multilevel flash memory contains blocks of cells that represent data by the amount of charge stored ...
<p>As NAND flash memory continues to scale down to smaller process technology nodes, its reliability...
Multi-level flash memory cells represent data by the amount of charge stored in them. Certain voltag...
Abstract—In this paper, we consider modulation codes for practical multilevel flash memory storage s...
The limited endurance of flash memories is a major design concern for enterprise storage systems. We...
Error-correcting codes are used to achieve reliable and efficient transmission when storing or sendi...
The aggressive scaling of NAND flash memories has caused significant degradation in their reliabili...
Write-once memory (WOM) is a storage medium with memory elements, called cells, which can take on q ...
Flash memories are, by far, the most important type of non -volatile memory in use today. They are e...
Abstract — Several physical effects that limit the reliability and performance of Multilevel Flash m...
A write-once memory (WOM) is a storage device that consists of cells that can take on q values, with...
Inter-cell interference (ICI) is one of the main obstacles to precise programming (i.e., writing) of...
In coding theory and information theory, constrained codes have been studied actively for numerous a...
High-density flash memories suffer from inter-cell interference (ICI) which threatens the reliabilit...
Non-volatile memories (NVMs) have attracted considerable attention as data storage media because of ...
Multilevel flash memory contains blocks of cells that represent data by the amount of charge stored ...
<p>As NAND flash memory continues to scale down to smaller process technology nodes, its reliability...
Multi-level flash memory cells represent data by the amount of charge stored in them. Certain voltag...
Abstract—In this paper, we consider modulation codes for practical multilevel flash memory storage s...
The limited endurance of flash memories is a major design concern for enterprise storage systems. We...
Error-correcting codes are used to achieve reliable and efficient transmission when storing or sendi...
The aggressive scaling of NAND flash memories has caused significant degradation in their reliabili...
Write-once memory (WOM) is a storage medium with memory elements, called cells, which can take on q ...
Flash memories are, by far, the most important type of non -volatile memory in use today. They are e...
Abstract — Several physical effects that limit the reliability and performance of Multilevel Flash m...
A write-once memory (WOM) is a storage device that consists of cells that can take on q values, with...