This paper presents an approach to discern MCUs from SEUs in SRAM memories. Experiments involving radiation tests with 14-MeV neutrons on two successive generations (130 and 90 nm) of Cypress devices are presented
Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell desig...
This paper presents an experimental study of the sensitivity to 15-MeV neutrons of Advanced Low Powe...
International audienceThis article reviews state-of-the-art techniques for the evaluation of the eff...
Recently, the occurrence of multiple events in static tests has been investigated by checking the st...
This paper addresses a well-known problem that occurs when memories are exposed to radiation: the de...
IEEE Catalog Number: CFP15449-ART (XPLORE) ISBN: 978-1-5090-0232-0 (XPLORE) IEEE Catalog Number: CFP...
International audienceRecently, the occurrence of multiple events in static tests has been investiga...
In radiation tests on SRAMs or FPGAs, two or more independent bitflips can be misled with a multiple...
After having carried out radiation experiments on memories, the detected bitflips must be classified...
This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage ...
International audienceWhile single bit upsets on memories and storage elements are mitigated with ei...
This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltage...
Static random access memory (SRAM) is one the most sensitive devices to radiation. It may often exhi...
During neutron irradiation of 4-Mb SRAMs, large-scale multiple cell upsets (MCUs) were observed. The...
This article presents an experimental study on the sensitivity of a commercial-off-the-shelf (COTS) ...
Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell desig...
This paper presents an experimental study of the sensitivity to 15-MeV neutrons of Advanced Low Powe...
International audienceThis article reviews state-of-the-art techniques for the evaluation of the eff...
Recently, the occurrence of multiple events in static tests has been investigated by checking the st...
This paper addresses a well-known problem that occurs when memories are exposed to radiation: the de...
IEEE Catalog Number: CFP15449-ART (XPLORE) ISBN: 978-1-5090-0232-0 (XPLORE) IEEE Catalog Number: CFP...
International audienceRecently, the occurrence of multiple events in static tests has been investiga...
In radiation tests on SRAMs or FPGAs, two or more independent bitflips can be misled with a multiple...
After having carried out radiation experiments on memories, the detected bitflips must be classified...
This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage ...
International audienceWhile single bit upsets on memories and storage elements are mitigated with ei...
This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias voltage...
Static random access memory (SRAM) is one the most sensitive devices to radiation. It may often exhi...
During neutron irradiation of 4-Mb SRAMs, large-scale multiple cell upsets (MCUs) were observed. The...
This article presents an experimental study on the sensitivity of a commercial-off-the-shelf (COTS) ...
Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell desig...
This paper presents an experimental study of the sensitivity to 15-MeV neutrons of Advanced Low Powe...
International audienceThis article reviews state-of-the-art techniques for the evaluation of the eff...