Neutron-Induced single events in a COTS soft-error free SRAM at low bias voltage
- Clemente Barreira, Juan Antonio
- Franco Peláez, Francisco Javier
- Vila, Francesca
- Baylac, Maud
- Ramos Vargas, Pablo Francisco
- Vargas Vallejo, Vanessa Carolina
- Mecha López, Hortensia
- Agapito Serrano, Juan Andrés
- Velazco, Raoul
Publication date
September 2015
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed
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