We have studied LO phonon-plasmon coupled modes by means of Raman scattering in n-InP for carrier densities between 6x10(16) and 1x10(19) cm(-3). A line-shape theory based on the Lindhard-Mermin dielectric function that takes into account the nonparabolicity of the InP conduction band as well as temperature and finite wave-vector effects is used to fit the Raman spectra and extract accurate values of the electron density. The results obtained from the Lindhard-Mermin model are compared with the charge density determinations based on the Drude and the hydrodynamical models, and the approximations involved in these models are discussed
We present Raman spectra of InP measured under nonresonant conditions revealing multiphonon processe...
An inelastic-light-scattering experiment from the (100) face of p-type HgTe, a zero-band-gap semicon...
Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering...
© 2015 Elsevier B.V. We present a Raman scattering study of LO phonon-coupled modes in Be-doped, p-t...
We study the Raman scattering of n-type InN films grown by molecular beam epitaxy on ZnO substrates....
We have verified the accuracy of free-charge determinations from Raman scattering in doped semicondu...
4 pages, 3 figures.-- PACS: 78.30.Fs; 72.20.My; 73.61.Ey; 71.20.Nr; 78.66.Fd; 63.20.Ls; 72.80.EyWe ...
We use a hydrodynamical approach to analyse the long-wavelength LO-phonon–plasmon coupled modes obs...
Raman scattering from longitudinal optical phonon-plasmon coupled mode was observed in a series of I...
High-magnetic-field (up to 28 T) inelastic light scattering experiments on coupled plasmon-LO-phono...
The infrared transmission spectrum of Si-doped molecular beam epitaxy (MBE)-grown GaAs epilayers, 2-...
Raman scattering by coupled LO phonon-plasmon modes in p-type GaN layers has been measured for diffe...
Previous studies of III-V semiconductors using resonant Raman scattering have concentrated on measur...
We report on Raman scattering by longitudinal optical phonons in In1−y−zAlyGazAs (1−y−z=0.53) lattic...
Electronic Raman scattering was used to investigate excited states of shallow acceptors in Zn- and i...
We present Raman spectra of InP measured under nonresonant conditions revealing multiphonon processe...
An inelastic-light-scattering experiment from the (100) face of p-type HgTe, a zero-band-gap semicon...
Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering...
© 2015 Elsevier B.V. We present a Raman scattering study of LO phonon-coupled modes in Be-doped, p-t...
We study the Raman scattering of n-type InN films grown by molecular beam epitaxy on ZnO substrates....
We have verified the accuracy of free-charge determinations from Raman scattering in doped semicondu...
4 pages, 3 figures.-- PACS: 78.30.Fs; 72.20.My; 73.61.Ey; 71.20.Nr; 78.66.Fd; 63.20.Ls; 72.80.EyWe ...
We use a hydrodynamical approach to analyse the long-wavelength LO-phonon–plasmon coupled modes obs...
Raman scattering from longitudinal optical phonon-plasmon coupled mode was observed in a series of I...
High-magnetic-field (up to 28 T) inelastic light scattering experiments on coupled plasmon-LO-phono...
The infrared transmission spectrum of Si-doped molecular beam epitaxy (MBE)-grown GaAs epilayers, 2-...
Raman scattering by coupled LO phonon-plasmon modes in p-type GaN layers has been measured for diffe...
Previous studies of III-V semiconductors using resonant Raman scattering have concentrated on measur...
We report on Raman scattering by longitudinal optical phonons in In1−y−zAlyGazAs (1−y−z=0.53) lattic...
Electronic Raman scattering was used to investigate excited states of shallow acceptors in Zn- and i...
We present Raman spectra of InP measured under nonresonant conditions revealing multiphonon processe...
An inelastic-light-scattering experiment from the (100) face of p-type HgTe, a zero-band-gap semicon...
Optical vibration modes of InP nanowires in the wurtzite phase were investigated by Raman scattering...