Samples of zinc telluride bulk single crystals, which were deformed in uniaxial compression, have been studied by photoluminescence (PL) and cathodoluminescence (CL). As a particular feature the deformed samples present a PL emission band peaked at 603 nm, whose intensity increases as the plastic deformation does. This band is related to the density of dislocations produced during the interaction of slip systems. This hypothesis is supported by CL images. which reveal the activation of the successive slip systems corresponding to different levels of deformation
Cathodoluminescence in the scanning electron microscope has been used to investigate the relationshi...
Geochemical and geochronological studies of zircon are commonly supplemented by cathodoluminescence ...
Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10^19 at./cm^3 of indium in the init...
The electronic recombination properties of defects in ZnSe is a subject of interest related to the a...
Title: Defects limiting charge collection in semiinsulated CdZnTe Author: Vít Zajac Department: Inst...
In this study, we used cathodoluminescence (CL) spectroscopy to examine the CL emissions of zinc sel...
The effect of plastic deformation on the optical and structural properties of ZnSe crystals has been...
AbstractWe demonstrate that sensitivity of polariscopy to residual strains is higher than that of th...
ZnTe single crystals grown by the cold travelling heater method have been investigated by means of p...
In this thesis, I present a detailed study of Cd1-xZn xTe crystals with 0 ≤ x ≤ 0.14 using photolumi...
The intrinsic brittleness of inorganic semiconductors prevents them from extended engineering applic...
Bulk single crystals of zinc telluride up to 10 mm thick have been grown by the Multi-Tube Physical ...
abstract: Extended crystal defects often play a critical role in determining semiconductor device pe...
We demonstrate unambiguously that the well-known defect-related Y luminescence band at 1.476 eV in C...
Test pieces of GaAs were cut from Czochralski grown wafers. Prior to deformation the dislocation co...
Cathodoluminescence in the scanning electron microscope has been used to investigate the relationshi...
Geochemical and geochronological studies of zircon are commonly supplemented by cathodoluminescence ...
Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10^19 at./cm^3 of indium in the init...
The electronic recombination properties of defects in ZnSe is a subject of interest related to the a...
Title: Defects limiting charge collection in semiinsulated CdZnTe Author: Vít Zajac Department: Inst...
In this study, we used cathodoluminescence (CL) spectroscopy to examine the CL emissions of zinc sel...
The effect of plastic deformation on the optical and structural properties of ZnSe crystals has been...
AbstractWe demonstrate that sensitivity of polariscopy to residual strains is higher than that of th...
ZnTe single crystals grown by the cold travelling heater method have been investigated by means of p...
In this thesis, I present a detailed study of Cd1-xZn xTe crystals with 0 ≤ x ≤ 0.14 using photolumi...
The intrinsic brittleness of inorganic semiconductors prevents them from extended engineering applic...
Bulk single crystals of zinc telluride up to 10 mm thick have been grown by the Multi-Tube Physical ...
abstract: Extended crystal defects often play a critical role in determining semiconductor device pe...
We demonstrate unambiguously that the well-known defect-related Y luminescence band at 1.476 eV in C...
Test pieces of GaAs were cut from Czochralski grown wafers. Prior to deformation the dislocation co...
Cathodoluminescence in the scanning electron microscope has been used to investigate the relationshi...
Geochemical and geochronological studies of zircon are commonly supplemented by cathodoluminescence ...
Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10^19 at./cm^3 of indium in the init...