GaSb and GaInSb compounds were synthesised from the component elements using a new technique. The effect of the electro-magnetic induction on the conductor materials is used in order to heat, melt and mix the Ga, Sb and In elements. The homogeneity and the structural quality of the elaborated feed materials were verified by using different techniques: Scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), Rutherford backscattering (RBS), Particle-induced X-ray emission (PIXE), Cathodoluminescence in the scanning electron microscope (SEM-CL), Wavelength dispersive X-ray microanalysis (WDX), Transmission electron microscopy (TEM). It is found that the GaSb material totally reacts but GaInSb alloys present heterogeneities at th...
The growth of dilute nitride alloys of GaInSb by plasma-assisted molecular beam epitaxy is reported....
In this work the compositional and optical characterization of three series of dilute-Sb GaN1 − xSbx...
Single crystals of Ge saturated with GaSb were prepared by temperature gradient zone melting at 750°...
Undoped and Te-doped gallium antimonide (GaSb) layers have been grown on GaSb bulk substrates by the...
Abstract Spatial compositional analysis has been carried out on single and polycrystal wafers of GaS...
In this work, the experimental set-up of the Vertical Feeding Method (VFM) which has been used for t...
Groups III–V semiconductors have received a great deal of attention because of their potential advan...
Alloys with gallium, antimony and zinc, whose elements, metal constituent WEEE (they are specified f...
Dilute Te-doped GaSb alloys have been prepared by the vertical feeding method (VFM) using both casti...
Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb su...
© 2001 Elsevier Science B.V. Spring Meeting of the European-Materials-Research-Society (2000. Strasb...
GaInSb and GaSb layers have been grown on GaSb and GaAs substrates using metalorganic vapor phase ep...
The low-temperature electrochemical deposition of GaSb and InSb semiconductors from aqueous electrol...
The homogeneity and luminescence properties of undoped bulk GaSb have been studied by the cathodolum...
Quaternary semiconductor alloys based on GaSb are suitable for thermo-photo voltaic cell application...
The growth of dilute nitride alloys of GaInSb by plasma-assisted molecular beam epitaxy is reported....
In this work the compositional and optical characterization of three series of dilute-Sb GaN1 − xSbx...
Single crystals of Ge saturated with GaSb were prepared by temperature gradient zone melting at 750°...
Undoped and Te-doped gallium antimonide (GaSb) layers have been grown on GaSb bulk substrates by the...
Abstract Spatial compositional analysis has been carried out on single and polycrystal wafers of GaS...
In this work, the experimental set-up of the Vertical Feeding Method (VFM) which has been used for t...
Groups III–V semiconductors have received a great deal of attention because of their potential advan...
Alloys with gallium, antimony and zinc, whose elements, metal constituent WEEE (they are specified f...
Dilute Te-doped GaSb alloys have been prepared by the vertical feeding method (VFM) using both casti...
Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} epilayers were grown lattice matched to GaSb su...
© 2001 Elsevier Science B.V. Spring Meeting of the European-Materials-Research-Society (2000. Strasb...
GaInSb and GaSb layers have been grown on GaSb and GaAs substrates using metalorganic vapor phase ep...
The low-temperature electrochemical deposition of GaSb and InSb semiconductors from aqueous electrol...
The homogeneity and luminescence properties of undoped bulk GaSb have been studied by the cathodolum...
Quaternary semiconductor alloys based on GaSb are suitable for thermo-photo voltaic cell application...
The growth of dilute nitride alloys of GaInSb by plasma-assisted molecular beam epitaxy is reported....
In this work the compositional and optical characterization of three series of dilute-Sb GaN1 − xSbx...
Single crystals of Ge saturated with GaSb were prepared by temperature gradient zone melting at 750°...