High Quality Ti-Implanted Si Layers Above Solid Solubility Limit
- Mártil de la Plaza, Ignacio
- González Díaz, Germán
- Olea Ariza, Javier
- San Andres Serrano, Enrique
Publication date
January 2009
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
In this work we report the successful doping of Si with Ti at doses beyond the Mott limit for this element keeping high lattice quality. Ti implantation in Si at high doses and subsequent Pulsed-Laser Melting (PLM) annealing have been performed. Time-of-Flight Secondary Ion Mass Spectroscopy (SIMS) measurements confirm that Ti concentration exceed the Mott limit in the implanted layer, and Glancing Incidence X-Ray Diffraction (GIXRD) and Transmission Electron Microscopy (TEM) measurements prove that good crystallinity can be achieved over solid solubility limit. Hall effect characterization points out a high electrical activation and high mobility in all samples
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