Relationship between the cathodoluminescence emission and resistivity in In doped CdZnTe crystals
- Rodríguez Fernández, J.
- Carcelen, V.
- Hidalgo Alcalde, Pedro
- Vijayan, N.
- Piqueras de Noriega, Javier
- Sochinskii, N. V.
- Pérez, J. M.
- Dieguez, E.
DOIAbstract
Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10^19 at./cm^3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), and current-voltage behavior at room temperature. The results shows that Cd and Te vacancy concentration depend on the indium and zinc concentrations. CL measurements indicate a relationship between radiative centers associated to Cd and Te vacancies and resistivity values
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