We present an in silico study of the neuromorphic-computing behavior of the prototypical phase-change material, Ge2Sb2Te5, using ab initio molecular-dynamics simulations. Stepwise changes in structural order in response to temperature pulses of varying length and duration are observed, and a good reproduction of the spike-timing-dependent plasticity observed in nanoelectronic synapses is demonstrated. Short above-melting pulses lead to instantaneous loss of structural and chemical order, followed by delayed partial recovery upon structural relaxation. We also investigate the link between structural order and electrical and optical properties. These results pave the way toward a first-principles understanding of phase-change physics beyond b...
Phase change materials are of great interest as active layers in rewritable optical disks and novel ...
Multilevel operation is a topic of much current research in the field of phase-change memory materia...
The phase-change material, Ge2Sb2Te5, is the canonical material ingredient for next-generation stora...
We present an in silico study of the neuromorphic-computing behavior of the prototypical phase-chang...
We present an in silico study of the neuromorphic-computing behavior of the prototypical phase-chang...
Raw data to accompany the article Ab Initio Molecular-Dynamics Simulation of Neuromorphic Computing ...
The global demand for data storage and processing has increased exponentially in recent decades. To ...
The phase-change material, Ge2Sb2Te5, is the canonical material ingredient for next-generation stora...
We have simulated, by ab initio molecular dynamics (MD), the entire phase-change (PC) cycle in Ge-Sb...
Abstract Realization of brain-like computer has always been human’s ultimate dream. Today, the possi...
Phase change materials (PCMs) possess a peculiar combination of properties. They are capable of swit...
Phase-change materials (PCMs) are the subject of considerable interest because they have been recogn...
Phase change devices in both optical and electrical formats have been subject of intense research si...
Phase-change memory materials are promising candidates for beyond-silicon, next-generation non-volat...
In this work, we demonstrate how phase change memory (PCM) devices can be used to emulate biological...
Phase change materials are of great interest as active layers in rewritable optical disks and novel ...
Multilevel operation is a topic of much current research in the field of phase-change memory materia...
The phase-change material, Ge2Sb2Te5, is the canonical material ingredient for next-generation stora...
We present an in silico study of the neuromorphic-computing behavior of the prototypical phase-chang...
We present an in silico study of the neuromorphic-computing behavior of the prototypical phase-chang...
Raw data to accompany the article Ab Initio Molecular-Dynamics Simulation of Neuromorphic Computing ...
The global demand for data storage and processing has increased exponentially in recent decades. To ...
The phase-change material, Ge2Sb2Te5, is the canonical material ingredient for next-generation stora...
We have simulated, by ab initio molecular dynamics (MD), the entire phase-change (PC) cycle in Ge-Sb...
Abstract Realization of brain-like computer has always been human’s ultimate dream. Today, the possi...
Phase change materials (PCMs) possess a peculiar combination of properties. They are capable of swit...
Phase-change materials (PCMs) are the subject of considerable interest because they have been recogn...
Phase change devices in both optical and electrical formats have been subject of intense research si...
Phase-change memory materials are promising candidates for beyond-silicon, next-generation non-volat...
In this work, we demonstrate how phase change memory (PCM) devices can be used to emulate biological...
Phase change materials are of great interest as active layers in rewritable optical disks and novel ...
Multilevel operation is a topic of much current research in the field of phase-change memory materia...
The phase-change material, Ge2Sb2Te5, is the canonical material ingredient for next-generation stora...