Design, fabrication and characterizations of AlGaN/GaN heterostructure sensors

The microelectronics industry, next to the powerful, continuously scaling of integrated circuits, is currently evolving in the diversification of integrated functions, generally referred to as more than Moore (MtM). MtM concerns all technologies enabling microsystems to be elevated to a higher integration level, and with small package size, lower power consumption and lower cost. Microelectromechanical (MEMS) are crucial within this development. While Si has proven to be the primary contestant in the MEMS sensor market, there is a growing need for sensors operating at conditions beyond the limits of Si. Si-based micro-sensors cannot operate in harsh environments such as high temperature, high radiation, high pressure, and chemically corrosive conditions. Wide bandgap semiconductors such as Gallium Nitride (GaN) are potential candidates to replace silicon due to their specific characteristics and proven performance in the power or LED applications. The research objective of this thesis is to develop a MEMS sensor platform utilizing GaN-based materials. The design, fabrication, packaging, and measurement of pressure, deep UV photodetector, and gas sensors are presented and discussed.Electronic Components, Technology and Material