Nanostructured substrates are an interesting path towards the production of quantum dots devoted to microelectronic applications. In this work we report results on the effects of different nanopatterning methods to obtain lateral ordering of Ge islands grown on Si. By using Scanning Tunneling Microscopy we have studied in real-time the wetting layer growth and islands formation on nanopatterned Si substrates at 500 °C. We compare results obtained on Si substrates nanopatterned by using two different techniques: STM lithography and natural patterning induced by surface instabilities such as step bunching. Different issues on both cases have been addressed: substrate preparation, Ge dots placement and growth mode. We have observed that, on Si...
The nanoscale ordering of inorganic semiconductor quantum dots (QDs) is crucial to obtain reliable s...
Quantum dots (QDs) are actually easily produced by self-assembling during heteroepitaxial growth of ...
We investigate the growth behavior and microstructure of Ge self-assembled islands of nanometer dime...
To investigate the effect of surface patterning on island growth, a real-time study by scanning tunn...
Quantum dots (QDs) grown on semiconductors surfaces are actually the main researchers' interest for ...
Quantum dots (QDs) grown on semiconductors surfaces are actually the main researchers' interest for ...
Nanotechnology aims at exploiting the remarkable size effects that arise when materials are reducec ...
International audienceThe self-organized growth of germanium quantum dots on square nanopatterned Si...
We have grown Ge quantum dots by Physical Vapor Deposition (PVD) on step bunched Si(111) surfaces, v...
Spatial organization of Ge islands, grown by physical vapor deposition, on prepatterned Si(001) subs...
We have grown Ge quantum dots by Physical Vapor Deposition (PVD) on step bunched Si(111) surfaces, ...
The nanoscale ordering of inorganic semiconductor quantum dots (QDs) is crucial to obtain reliable s...
Quantum dots (QDs) are actually easily produced by self-assembling during heteroepitaxial growth of ...
We investigate the growth behavior and microstructure of Ge self-assembled islands of nanometer dime...
To investigate the effect of surface patterning on island growth, a real-time study by scanning tunn...
Quantum dots (QDs) grown on semiconductors surfaces are actually the main researchers' interest for ...
Quantum dots (QDs) grown on semiconductors surfaces are actually the main researchers' interest for ...
Nanotechnology aims at exploiting the remarkable size effects that arise when materials are reducec ...
International audienceThe self-organized growth of germanium quantum dots on square nanopatterned Si...
We have grown Ge quantum dots by Physical Vapor Deposition (PVD) on step bunched Si(111) surfaces, v...
Spatial organization of Ge islands, grown by physical vapor deposition, on prepatterned Si(001) subs...
We have grown Ge quantum dots by Physical Vapor Deposition (PVD) on step bunched Si(111) surfaces, ...
The nanoscale ordering of inorganic semiconductor quantum dots (QDs) is crucial to obtain reliable s...
Quantum dots (QDs) are actually easily produced by self-assembling during heteroepitaxial growth of ...
We investigate the growth behavior and microstructure of Ge self-assembled islands of nanometer dime...