Wetting-layer-pumped continuous-wave surface-emitting quantum-dot laser
- Wilcox, K.G.
- Kbashi, H.J.
- Quarterman, A.H.
- Morris, O.J.
- Apostolopoulos, V.
- Henini, M.
- Tropper, A.C.
Publication date
October 2011
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to their large inhomogeneous gain spectrum and the potential for temperature insensitivity and low threshold. We report a QD VECSEL which is wetting-layer-pumped using a 915-nm diode laser, reducing the quantum defect compared to barrier pumping. A slope efficiency of 56% relative to absorbed pump power was measured from an unprocessed sample with a heat-sink temperature of -30 °C, 1.75× higher than when barrier pumped using an 830-nm pump diode
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