Ultrahigh-energy (UHE) heavy ions show various advantages at testing single-event effect (SEE) in modern technologies, due to their highly penetrating nature. However, the intercepting material in the beam line contributes to the modification of the beam structure by generation of fragments produced via nuclear interactions. This is especially relevant for UHE heavy ion beams, representative of energies in space, which are not fully investigated through conventional ground-level testing. This article is dedicated to the study of the longitudinal energy deposition mechanisms in silicon by the aforementioned heavy ion beams and their fragments. The presented studies have been carried out using Monte Carlo simulations triggered by experimental...
In this study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast ...
A microscopic, single-particle view of impact ionization in silicon is obtained from a modified full...
The presented Monte Carlo model simulates excitation of the electron subsystem of semiconductors by ...
Fragmented heavy ion beams obtained from the interaction of highly energetic ions with thick targets...
The energy deposited by heavy-ion beams was measured using a passivated implanted planar silicon (PI...
We perform Monte Carlo (MC) simulations to describe heavy ion nuclear interactions in a broad energy...
We perform Monte Carlo (MC) simulations to describe heavy ion (HI) nuclear interactions in a broad e...
The characteristics of the energy deposition of the secondary particles from the proton and neutron ...
Analyses were conducted of various models and mechanisms of highly charged ion HCI and swift-heavy...
It is shown by simulation studies that essentially each inelastic hadronic interaction in silicon ge...
International audienceHigh energy interaction of heavy ions with silicon integrated circuits contrib...
Accepté a Physical Review AThe impact parameter dependence of electron capture by 20 MeV/u U$^{91+}$...
Traditional heavy-ion testing for single-event effects is carried out in cyclotron facilities with e...
The properties of sputtered and scattered ions are studied for ion beam sputtering of Si by bombardm...
CASInternational audienceIn two experiments performed with 20-30 MeV/u highly charged heavy ions (Pb...
In this study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast ...
A microscopic, single-particle view of impact ionization in silicon is obtained from a modified full...
The presented Monte Carlo model simulates excitation of the electron subsystem of semiconductors by ...
Fragmented heavy ion beams obtained from the interaction of highly energetic ions with thick targets...
The energy deposited by heavy-ion beams was measured using a passivated implanted planar silicon (PI...
We perform Monte Carlo (MC) simulations to describe heavy ion nuclear interactions in a broad energy...
We perform Monte Carlo (MC) simulations to describe heavy ion (HI) nuclear interactions in a broad e...
The characteristics of the energy deposition of the secondary particles from the proton and neutron ...
Analyses were conducted of various models and mechanisms of highly charged ion HCI and swift-heavy...
It is shown by simulation studies that essentially each inelastic hadronic interaction in silicon ge...
International audienceHigh energy interaction of heavy ions with silicon integrated circuits contrib...
Accepté a Physical Review AThe impact parameter dependence of electron capture by 20 MeV/u U$^{91+}$...
Traditional heavy-ion testing for single-event effects is carried out in cyclotron facilities with e...
The properties of sputtered and scattered ions are studied for ion beam sputtering of Si by bombardm...
CASInternational audienceIn two experiments performed with 20-30 MeV/u highly charged heavy ions (Pb...
In this study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast ...
A microscopic, single-particle view of impact ionization in silicon is obtained from a modified full...
The presented Monte Carlo model simulates excitation of the electron subsystem of semiconductors by ...