Core/shell nanowire (NW) heterostructures based on III-V semiconductors and related alloys are attractive for optoelectronic and photonic applications owing to the ability to modify their electronic structure via bandgap and strain engineering. Post-growth thermal annealing of such NWs is often involved during device fabrication and can also be used to improve their optical and transport properties. However, effects of such annealing on alloy disorder and strain in core/shell NWs are not fully understood. In this work we investigate these effects in novel core/shell/shell GaAs/GaNAs/GaAs NWs grown by molecular beam epitaxy on (111) Si substrates. By employing polarization-resolved photoluminescence measurements, we show that annealing (i) i...
Combination of mismatched materials in semiconductor nanowire heterostructures offers a freedom of b...
Strain engineering of semiconductors is used to modulate carrier mobility, tune the energy bandgap, ...
Thanks to their unique morphology, nanowires have enabled integration of materials in a way that was...
We report on optimization of growth conditions of GaAs/GaNAs/GaAs core/shell/shell nanowire (NW) str...
Nanowires (NWs) with embedded zero-dimensional (0D) quantum dots (QDs) have interesting fundamental ...
Recent developments in fabrication techniques and extensive investigations of the physical propertie...
Strain engineering is a powerful tool for designing nanowires with tailored properties for a variety...
GaAs/AlGaAs core–shell nanowires (NWs) were grown on Si(111) by Ga-assisted molecular beam epitaxy v...
Semiconducting nanowires (NWs), especially those with a direct band gap, could be promising building...
International audienceWe present a set of experimental results showing a combination of various effe...
The realisation of photonic devices for different energy ranges demands materials with different ban...
The monolithic integration of III-V semiconductors on Si substrates is a part of a long-term technol...
Understanding the compositional distribution of ternary nanowires is essential to build the connecti...
The role of annealing for (In,Ga)As self-organized quantum wire (QWR) formation on GaAs (100) during...
We have studied the effect of rapid thermal annealing (RTA) on highly strained InGaAs/GaAs quantum w...
Combination of mismatched materials in semiconductor nanowire heterostructures offers a freedom of b...
Strain engineering of semiconductors is used to modulate carrier mobility, tune the energy bandgap, ...
Thanks to their unique morphology, nanowires have enabled integration of materials in a way that was...
We report on optimization of growth conditions of GaAs/GaNAs/GaAs core/shell/shell nanowire (NW) str...
Nanowires (NWs) with embedded zero-dimensional (0D) quantum dots (QDs) have interesting fundamental ...
Recent developments in fabrication techniques and extensive investigations of the physical propertie...
Strain engineering is a powerful tool for designing nanowires with tailored properties for a variety...
GaAs/AlGaAs core–shell nanowires (NWs) were grown on Si(111) by Ga-assisted molecular beam epitaxy v...
Semiconducting nanowires (NWs), especially those with a direct band gap, could be promising building...
International audienceWe present a set of experimental results showing a combination of various effe...
The realisation of photonic devices for different energy ranges demands materials with different ban...
The monolithic integration of III-V semiconductors on Si substrates is a part of a long-term technol...
Understanding the compositional distribution of ternary nanowires is essential to build the connecti...
The role of annealing for (In,Ga)As self-organized quantum wire (QWR) formation on GaAs (100) during...
We have studied the effect of rapid thermal annealing (RTA) on highly strained InGaAs/GaAs quantum w...
Combination of mismatched materials in semiconductor nanowire heterostructures offers a freedom of b...
Strain engineering of semiconductors is used to modulate carrier mobility, tune the energy bandgap, ...
Thanks to their unique morphology, nanowires have enabled integration of materials in a way that was...