Structural, optical, morphological and electrical characteristics of polyaniline for device applications

Polyaniline has been chemically synthesised by oxidative polymerization of 0.1 M aniline monomer using 0.3 M dodecyl benzene sulphonic acid (DBSA) as a dopant. The formation of polymer has been confirmed by X-ray diffraction and FTIR measurements where as surface morphology has been observed using scanning electron microscope. The spin coated polyaniline film has been prepared over ITO coated glass substrate and its current voltage response has been analyzed using Schottky emission theory. The band gap of the material has been calculated using UV visible spectroscopy and found to be 2.7 eV. The current-voltage response of deposited film gives the value of barrier height (empty set(b)) and constant factor (beta) as 0.307 eV and 1.89x10(-4,) respectively. These films may have potential applications in electronic and optoelectronic sensing devices