ASSESMENT OF DAMAGE OF SOLAR HETEROJUNCTION a-SiC/c-Si INDUCED BY NEUTRON RADIATION

Amorphous silicon carbide is known as a material resistant except others influences also against radiation. This study investigates the effects of neutron radiation on electric characteristics (I-V characteristic, impedance spectra and obtained dynamic parameters of AC equivalent circuit) of solar cell a-SiC/c-Si heterojunction structure. The heterojunction structure was irradiated using neutrons with neutron fluence 1013 cm-2. Existence of neutron induced structural defects, which could be introduced within semiconductor structure of heterojunction, has been illustrated using DC and AC analysis. The structural defects induced by neutron particles radiation affect mainly trapping mechanism. The process results in the changes of electronic elements included into proposed equivalent circuit