Low turn-on voltage and high breakdown GaN Schottky barrier diodes for RF energy harvesting applications

This work presents the design, fabrication, and analysis of GaN Schottky barrier diodes with multi-finger structure on the silicon substrate using various layout parameters, aiming for RF energy harvesting applications. The measured results demonstrate a low turn-on voltage (V on) and a high breakdown voltage (V BK) of 0.56 V and 47 V, respectively. A high cut-off frequency (f c) of 360.9 GHz under reverse bias of -10 V is also obtained for a two-finger device with each finger of W = 12.5 μm and L = 0.2 μm